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  1. No Access

    Article

    Thermal Stability of Soil Organic Matter in Postagrogenic Luvic Phaeozems

    The efficiency of carbon sequestration in abandoned soils depends on the stability of accumulated organic matter. The resistance of soil organic matter (SOM) of postagrogenic dark gray forest soils (Luvic Phaeoze...

    E. A. Filimonenko, M. A. Uporova, E. A. Arbuzova… in Eurasian Soil Science (2023)

  2. No Access

    Article

    Charcoals in the Middle Taiga Podzols of Western Siberia as an Indicator of Geosystem History

    A middle-taiga iron-illuvial podzol (Glossic Endogleyic Albic Podzol) was studied on an ancient eolian dune in the Bol’shoi Yugan River basin (the Ob’ River tributary, Surgut region), near the large-scale arch...

    S. V. Loiko, D. M. Kuz’mina, A. A. Dudko, A. O. Konstantinov… in Eurasian Soil Science (2022)

  3. No Access

    Article

    Palynological Profile and Depositional Environment of the Ishim Formation (Upper Miocene) in Tobol–Ishim Interfluve, Western Siberia

    For the first time, sections of the Upper Miocene Ishim Formation in the south of Tyumen oblast near the villages of Pyatkovo, Masali and Bigila were thoroughly studied by the palynological method. A series of...

    O. B. Kuzmina, I. V. Khazina, P. V. Smirnov… in Stratigraphy and Geological Correlation (2019)

  4. No Access

    Article

    Variability in distribution of major and trace elements in Lower Eocene siliceous sections of the Transuralian Region, Russia

    This paper presents lithologic and geochemical data from the sequence of the Eocene Irbit formation siliceous rocks (Transuralian Region) outcrop** in a quarry in the Irbit deposit (thickness of 15 m) and in...

    P. V. Smirnov, A. O. Konstantinov, G. A. Batalin, B. I. Gareev in Acta Geochimica (2019)

  5. No Access

    Article

    Petrology and industrial application of main diatomite deposits in the Transuralian region (Russian Federation)

    In the middle of the last centuary, large resources of Paleocene–Eocene diatomites were discovered in the Transuralian region. By now, more than 100 near-surface diatomite deposits and potential sites have bee...

    P. V. Smirnov, A. O. Konstantinov, H.-J. Gursky in Environmental Earth Sciences (2017)

  6. No Access

    Article

    New data on the lithology of coastal facies of the Turtas formation (Upper Oligocene, Southwestern Siberia)

    Peculiarities of the material composition and microstructure of coastal facies of Turtas Lake–Sea were studied in its marginal southwestern part for the first time. Interpretation of the lithological data show...

    P. V. Smirnov, A. O. Konstantinov, G. N. Aleksandrova… in Doklady Earth Sciences (2017)

  7. No Access

    Article

    Age and genesis of the Upper Cenozoic deposits of the Tyumen oblast (Western Siberia) enriched in biogenic silica

    An integrated micropaleontological study of deposits enriched in biogenic silica was conducted on material drilled in the Zyryanka and Uspenka fields of the southwestern Tyumen oblast (Western Siberia). The da...

    G. N. Aleksandrova, T. V. Oreshkina… in Stratigraphy and Geological Correlation (2017)

  8. No Access

    Article

    Characterization of P-Type Buffer Layers for SiC Microwave Device Applications

    Low-loped p-type silicon carbide buffer layers are grown by chemical vapor deposition on conducting and semi-insulating substrates. Capacitance-voltage and electrical admittance techniques are developed for ac...

    A. O. Konstantinov, S. Karlsson, P. Å Nilsson… in MRS Online Proceedings Library (2011)

  9. No Access

    Article

    Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

    Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical propertie...

    E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov… in Semiconductors (2004)

  10. No Access

    Article

    High-resolution short range ion detectors based on 4H-SiC films

    The energy resolution of SiC detectors has been studied in application to the spectrometry of α particles with 5.1–5.5 MeV energies. The Schottky barrier structure of the detector was based on a CVD-grown epit...

    A. M. Ivanov, E. V. Kalinina, A. O. Konstantinov… in Technical Physics Letters (2004)

  11. No Access

    Article

    Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

    The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p +-n-n + diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of hig...

    E. V. Kalinina, G. F. Kholuyanov, D. V. Davydov, A. M. Strel’chuk… in Semiconductors (2003)

  12. No Access

    Article

    On the possibility of creating a superfast-recovery silicon carbide diode

    The possibility of a superfast (<1 ns) termination of the reverse current during the recovery of a 4H-SiC diode with a p + p 0 n + structure is experimentally demonstrated for the first time. It is shown that the...

    I. V. Grekhov, P. A. Ivanov, A. O. Konstantinov… in Technical Physics Letters (2002)

  13. No Access

    Article

    Photoelectric properties of p +-n junctions based on 4H-SiC ion-implanted with aluminum

    The photoelectric properties of p +-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It i...

    G. N. Violina, E. V. Kalinina, G. F. Kholujanov, G. A. Onushkin… in Semiconductors (2002)

  14. No Access

    Article

    Silicon carbide detectors of high-energy particles

    The results of studying 4H-SiC p +-n junctions ion-implanted with aluminum as detectors of high-energy particles are reported. The junctions were formed in SiC epitaxial films grown by chemical vapor deposition. ...

    G. N. Violina, E. V. Kalinina, G. F. Kholujanov, V. G. Kossov… in Semiconductors (2002)

  15. No Access

    Article

    Temperature dependence of the quantum efficiency of 4H-SiC-based Schottky photodiodes

    Using metal-semiconductor structures based on a pure epitaxial layer of n-4H-SiC (N d− N a=4×1015 cm−3), UV photodetectors were created with a maximum photosensitivity at 4.9 eV and a quantum efficiency up to 0.3...

    T. V. Blank, Yu. A. Gol’dberg, E. V. Kalinina… in Technical Physics Letters (2001)

  16. No Access

    Article

    Study of avalanche breakdown and impact ionization in 4H silicon carbide

    Epitaxial p-n diodes in 4H SiC are fabricated with uniform avalanche multiplication and breakdown. Photomultiplication measurements were performed to determine electron and hole ionization rates. Theoretical v...

    A. O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefelt in Journal of Electronic Materials (1998)

  17. No Access

    Article

    CVD-Growth of Low-Doped 6H SIC Epitaxial Films

    We present a method for growing low-doped 6H SiC films using chemical vapour deposition in a hot-wall system. The study discusses the influence of temperature, growth rate and C/Si ratio on the purity of the l...

    O. Kordina, A. Henry, C. Hallin, R. C. Glass… in MRS Online Proceedings Library (1994)

  18. No Access

    Chapter and Conference Paper

    The Light Emitting Diodes on the Basis of Fast Electron Irradiated Silicon Carbide

    Green LEDs with λmax =510÷530 nm have been obtained by means of fast electron irradiation of 6H-SiC diode structures, prepared by gaseous phase epitaxy. These LEDs are shown to have improved fasted-action and lin...

    Yu. A. Vodakov, A. I. Girka… in Amorphous and Crystalline Silicon Carbide … (1992)