Abstract
Feasibility of lo-hi-lo and delta-doped structures for evaluation of high-field silicon carbide material properties is investigated. Delta-doped structures are grown using the hot-wall CVD technique. Aluminum and nitrogen do** profiles are demonstrated with FWHM below 10 nm. Nitrogen do** transients are found to be slower than those for aluminum. The growth interrupt technique has been developed for achieving narrow nitrogen do** peaks. Lo-hi-lo structures were fabricated using the implantation-and-regrowth technique. Structures with confined avalanche multiplication are demonstrated using the lo-hi-lo and delta do** techniques. The effect of substrate imperfections on early avalanche breakdown is investigated using confined avalanche multiplication devices.
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Konstantinov, A., Karlsson, S., Adås, C. et al. Investigation of Lo-Hi-Lo and Delta-Doped Silicon Carbide Structures. MRS Online Proceedings Library 640, 24 (2000). https://doi.org/10.1557/PROC-640-H2.4
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DOI: https://doi.org/10.1557/PROC-640-H2.4