45 Result(s)
within
N. T. Bagraev
English
Magnetism, Magnetic Materials
Physics, general
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Article
Terahertz Emission from Silicon Carbide Nanostructures
For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon...
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Article
Registration of Terahertz Irradiation with Silicon Carbide Nanostructures
The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudin...
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Article
Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms
The temperature dependences of the longitudinal resistance and heat capacity of silicon-carbide epitaxial films grown on single-crystal silicon substrates by the method of ghe coordinated substitution of atoms...
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Article
Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces
A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown o...
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Article
Description of the Magnetization Oscillations of a Silicon Nanostructure in Weak Fields at Room Temperature. The Lifshitz–Kosevich Formula with Variable Effective Carrier Mass
A formalism of the statistical approach to describing de Haas–van Alphen oscillations known as the Lifshitz–Kosevich formula is developed as applied to a low-dimensional system with an effective carrier mass d...
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Article
De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States
The field dependence of magnetization of a silicon nanosandwich measured at room temperature in weak magnetic fields manifests de Haas–van Alphen oscillations, the behavior of which is explained under the cond...
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Article
Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States
The observation of de Haas–van Alphen oscillations when studying the silicon nanostructure at room temperature in weak magnetic fields enables the use of thermodynamic relations to calculate the density of sta...
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Article
Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures
Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by delta-barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides depos...
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Article
High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the...
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Article
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures
Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited...
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Article
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures
The possibility of identifying DNA oligonucleotides deposited onto the region of the edge channels of silicon nanostructures is considered. The role of various THz (terahertz) radiation harmonics of silicon na...
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Article
Room temperature de Haas–van Alphen effect in silicon nanosandwiches
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid also promot...
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Article
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime
The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room tempera...
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Article
Defect-related luminescence in silicon p +–n junctions
Ultra-shallow p +–n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates up...
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Article
DNA detection by THz pum**
DNA semiconductor detection and sequencing is considered to be the most promising approach for future discoveries in genome and proteome research which is dramatically dependent on the challenges faced by semi...
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Article
Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure
We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. Thi...
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Article
Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)
Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D
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Article
Conductance matrix of multiterminal semiconductor devices with edge channels
A method for determining the conductance matrix of multiterminal semiconductor structures with edge channels is proposed. The method is based on the solution of a system of linear algebraic equations based on ...
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Article
Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures
A method for determining the conductance matrix is analyzed to study the properties of silicon nanostructures fabricated within Hall geometry on an n-type Si(100) surface as ultra-narrow p-type silicon quantum we...
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Article
Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures
The results of investigation of electrically-detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X-band) for the identification of shallow and deep boron centers,...
