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Article
Therapy of Covid Complications with Terahertz Irradiation
The results of the use of terahertz (THz) irradiation generated by a silicon nanosandwich under conditions of a stabilized source-drain current in the treatment of covid complications are presented. THz irradi...
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Article
Terahertz Express Diagnostics of Complications Caused by COVID-19
A spectrometer based on silicon nanosandwiches has been proposed to detect complications caused by COVID-19. Operating in the mode of a balanced photodetector, the silicon nanosandwich is both a source of tera...
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Article
Using Terahertz Irradiation to Mitigate the Effects of Radiation Exposure
Experimental data are presented on the effect of broadband irradiation in the terahertz range, modulated in the gigahertz range, on the survival of mice that have received acute poisoning with depleted uranium...
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Article
Magnetic Properties of Edge Channels of Silicon Nanosandwich Structures with Deposited DNA Oligonucleotides
Measurements of the field dependences of the static magnetic susceptibility demonstrate de Haas-Van Alphen and Aharonov–Bohm oscillations at high temperatures and low magnetic fields in silicon nanosandwich st...
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Article
Terahertz Emission from Silicon Carbide Nanostructures
For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon...
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Article
Registration of Terahertz Irradiation with Silicon Carbide Nanostructures
The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudin...
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Article
A Device for Transcutaneous Stimulation of the Diaphragm
Results obtained during the development of an original device for noninvasive transcutaneous stimulation of the diaphragm using electromagnetic radiation in the terahertz frequency range are presented. The blo...
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Article
Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces
A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown o...
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Article
Terahertz Radiation Sources and Detectors Based on Optical Microcavities Embedded in the Edge Channels of Silicon Nanosandwiches
Over the past 30 years, there has been a great deal of interest in the use of terahertz (THz) radiation in various fields, such as security systems, communications, and spectroscopy. In addition, THz radiation...
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Article
Terahertz Response of Biological Tissue for Diagnostic and Treatment in Personalized Medicine
A spectrometer based on silicon nanosandwiches (SNSs) is proposed for problems of personalized medicine. SNS structures exhibit properties of terahertz (THz) emitter and receiver of the THz response of biologi...
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Article
High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the...
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Article
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures
Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited...
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Article
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures
The possibility of identifying DNA oligonucleotides deposited onto the region of the edge channels of silicon nanostructures is considered. The role of various THz (terahertz) radiation harmonics of silicon na...
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Article
Room temperature de Haas–van Alphen effect in silicon nanosandwiches
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid also promot...
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Article
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime
The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room tempera...
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Article
Defect-related luminescence in silicon p +–n junctions
Ultra-shallow p +–n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates up...
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Article
Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure
We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. Thi...
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Article
Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)
Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D
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Article
Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures
A method for determining the conductance matrix is analyzed to study the properties of silicon nanostructures fabricated within Hall geometry on an n-type Si(100) surface as ultra-narrow p-type silicon quantum we...
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Article
Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures
The results of investigation of electrically-detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X-band) for the identification of shallow and deep boron centers,...
