Abstract
The observation of de Haas–van Alphen oscillations when studying the silicon nanostructure at room temperature in weak magnetic fields enables the use of thermodynamic relations to calculate the density of states at the Fermi level at critical values of external magnetic-field strengths for integer filling factors.
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Romanov, V.V., Kozhevnikov, V.A. & Bagraev, N.T. Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States. Semiconductors 53, 1633–1636 (2019). https://doi.org/10.1134/S106378261916022X
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DOI: https://doi.org/10.1134/S106378261916022X