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Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current–voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

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Authors and Affiliations

  1. St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia

    N. T. Bagraev & L. E. Klyachkin

  2. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. T. Bagraev, L. E. Klyachkin & A. M. Malyarenko

  3. St. Petersburg Academic University—Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. L. Chernev, A. K. Emel’yanov & M. V. Dubina

Authors
  1. N. T. Bagraev
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  2. A. L. Chernev
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  3. L. E. Klyachkin
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  4. A. M. Malyarenko
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  5. A. K. Emel’yanov
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  6. M. V. Dubina
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Corresponding author

Correspondence to N. T. Bagraev.

Additional information

Original Russian Text © N.T. Bagraev, A.L. Chernev, L.E. Klyachkin, A.M. Malyarenko, A.K. Emel’yanov, M.V. Dubina, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 10, pp. 1353–1357.

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Bagraev, N.T., Chernev, A.L., Klyachkin, L.E. et al. Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures. Semiconductors 50, 1333–1337 (2016). https://doi.org/10.1134/S1063782616100079

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  • DOI: https://doi.org/10.1134/S1063782616100079

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