SpringerLink
Log in

Terahertz Emission from Silicon Carbide Nanostructures

  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain-source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induces a change in the number of magnetic flux quanta in the edge channels, which leads to the appearance of a generation current in the edge channel and, accordingly, to terahertz radiation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price includes VAT (Germany)

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.

REFERENCES

  1. M. Danciu, T. Alexa-Stratulat, C. Stefanescu, G. Dodi, B. I. Tamba, C. Teodor Mihai, G. D. Stanciu, A. Luca, I. A. Spiridon, L. B. Ungureanu, V. Ianole, I. Ciortescu, C. Mihai, G. Stefanescu, I. Chirila, R. Ciobanu, V. L. Drug. Materials, 12 (9), 1519 (2019).

    Article  CAS  PubMed  PubMed Central  ADS  Google Scholar 

  2. S. Zhong. Front. Mech. Eng., 14 (3), 273 (2019).

    Article  ADS  Google Scholar 

  3. A. K. Panwar, A. Singh, A. Kumar, H. Kim. IJET-IJENS, 13, 33 (2013).

    Google Scholar 

  4. R. Lewis. J. Phys. D: Appl. Phys., 47 (37), 374001 (2014).

    Article  Google Scholar 

  5. L. Consolino, S. Bartalini, P. De Natale. J. Infr. Milli Terahz Waves, 38, 1289 (2017).

    Article  Google Scholar 

  6. E. M. Gershenzon, M. B. Golant, A. A. Negirev, V. S. Savel’ev. Lampy obratnoy volny millimetrovogo i submillimetrovogo diapazonov voln, pod red. N. D. Devyatkova (M., Radio i svyaz’, 1985) (in Russian).

  7. Q. Sun, Y. He, E. P. J. Parrott, E. P. MacPherson. J. Biophotonics, 11 (2), e201700111 (2018).

    Article  Google Scholar 

  8. https://www.menlosystems.com/products/thz-time-domain-so-lutions/terak15-terahertz-spectrometer/

  9. R. Köhler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Linfield, A. G. Davies, D. A. Ritchie, R. C. Iotti, F. Rossi. Nature, 417, 156 (2002).

    Article  PubMed  ADS  Google Scholar 

  10. J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, A. Y. Cho. Science, 264, 553 (1994).

    Article  CAS  PubMed  ADS  Google Scholar 

  11. L. Ozyuzer, A. E. Koshelev, C. Kurter, N. Gopalsami, Q. Li, M. Tachiki, K. Kadowaki, T. Yamamoto, H. Minami, H. Yamaguchi, T. Tachiki, K. E. Gray, W.‑K. Kwok, U. Welp. Science, 318, 1291 (2007).

    Article  CAS  PubMed  ADS  Google Scholar 

  12. N. T. Bagraev, P. A. Golovin, V. S. Khromov, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, B. A. Novikov, A. P. Presnukhina, A. S. Reukov, K. B. Taranets. J Altern. Complement Integr. Med., 6, 112 (2020).

    Google Scholar 

  13. N. T. Bagraev, L. E. Klyachkin, A. A. Kudryavtsev, A. M. Malyarenko, V. V. Romanov. FTP, 43 (11), 1481 (2009) (in Russian).

    Google Scholar 

  14. N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. I. Ryskin, A. S. Shcheulin. FTP, 39 (5), 557 (2005) (in Russian).

    Google Scholar 

  15. S. A. Kukushkin, A. V. Osipov. FTT 50, 1188 (2008) (in Russian).

    Google Scholar 

  16. S. A. Kukushkin, A. V. Osipov. DAN, 444, 266 (2012) (in Russian).

    Google Scholar 

  17. S. A. Kukushkin, A. V. Osipov. Izv. RAN. Mekhanika tverdogo tela, No. 2, 122 (2013). (in Russian).

  18. S. A. Kukushkin, A. V. Osipov. J. Phys. D: Appl. Phys., 47 (31), 313001 (2014).

    Article  ADS  Google Scholar 

  19. S. A. Kukushkin, A. V. Osipov, N. A. Feoktistov. FTT 56, 1457 (2014) (in Russian).

    Google Scholar 

  20. S. A. Kukushkin, A. V. Osipov. J. Phys. D: Appl. Phys., 50 (46), 464006 (2017).

    Article  ADS  Google Scholar 

  21. L. M. Sorokin, N. V. Veselov, M. P. Shcheglov, A. E. Kalmykov, A. A. Sitnikova, N. A. Feoktistov, A. V. Osipov, S. A. Kukushkin. Pis’ma ZhTF, 34 (22), 88 (2008) (in Russian).

    Google Scholar 

  22. S. A. Kukushkin, A. V. Osipov. Pis’ma ZhTF, 46 (22), 3 (2020) (in Russian).

    Google Scholar 

  23. N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov. FTP, 55 (2), 103 (2021) (in Russian).

    Google Scholar 

  24. N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov. Semiconductors, 50 (8), 1025 (2016).

    Article  CAS  ADS  Google Scholar 

  25. I. E. Gordon, L. S. Rothman, C. Hill, R. V. Kochanov, Y. Tan, P. F. Bernath, M. Birk, V. Boudon, A. Campargue, K. V. Chance, B. J. Drouin, J. M. Flaud et al. J. Quant. Spectrosc. Radiat. Transfer, 203, 3 (2017).

    Article  CAS  ADS  Google Scholar 

  26. N. T. Bagraev, L. E. Klyachkin, A. A. Kudryavtsev, A. M. Malyarenko. J. Modern Phys., 3, 1771 (2012).

    Article  Google Scholar 

  27. N. Hodgson, H. Weber. Laser Resonators and Beam Propagation (Fundamentals, Advanced Concepts, Applications, Springer, 2005).

  28. http://www.ioffe.ru/SVA/NSM

Download references

ACKNOWLEDGMENTS

The synthesis of a SiC layer on Si was performed using the equipment of the “Physics, Chemistry, and Mechanics of Chips and Thin Films” unique scientific unit at the Institute of Problems of Mechanical Engineering, Russian Academy of Sciences (St. Petersburg).

Funding

This study was carried out under financial support of the RSF grant (grant no. 20-12-00193).

Author information

Authors and Affiliations

  1. Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia

    N. T. Bagraev, S. A. Kukushkin, A. V. Osipov & V. S. Khromov

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko & V. S. Khromov

Authors
  1. N. T. Bagraev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. A. Kukushkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. V. Osipov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. L. E. Klyachkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. M. Malyarenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. V. S. Khromov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. T. Bagraev.

Ethics declarations

The authors declare that they have no conflicts of interest.

Additional information

Publisher’s Note.

Pleiades Publishing remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Bagraev, N.T., Kukushkin, S.A., Osipov, A.V. et al. Terahertz Emission from Silicon Carbide Nanostructures. Semiconductors 57, 347–353 (2023). https://doi.org/10.1134/S106378262309004X

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106378262309004X

Keywords:

Search

Navigation