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  1. No Access

    Chapter and Conference Paper

    Recent Results on Broadband Nanotransistor Based THz Detectors

    Nanometer size field effect transistors can operate as efficient detectors of terahertz radiation that means far beyond their fundamental cut-of frequency. This work is an overview of some recent results conce...

    Wojciech Knap, Dimitry B. But, N. Dyakonova, D. Coquillat… in THz and Security Applications (2014)

  2. No Access

    Article

    Resonant properties of the planar plasmonic crystal on a membrane substrate

    The theory of the plasmon resonance excitation in the plasmonic-crystal structure on a dielectric substrate is presented. The effect of the plasmon resonance intensity oscillation as a function of the substrat...

    V. V. Popov, D. V. Fateev, O. V. Polischuk… in Bulletin of the Russian Academy of Science… (2012)

  3. No Access

    Article

    Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel

    We present the theory of plasmon excitation in a grating-gate transistor structure with spatially modulated 2D electron channel. The plasmon spectrum varies depending on the electron density modulation in the ...

    D. V. Fateev, V. V. Popov, M. S. Shur in Semiconductors (2010)

  4. No Access

    Article

    Terahertz excitation of the higher-order plasmon modes in field-effect transistor arrays with common and separate two-dimensional electron channels

    Using a rigorous electrodynamic approach, the spectra of the terahertz response of periodically ordered arrays of field-effect transistors with two-dimensional electron channel were calculated. It was shown th...

    V. V. Popov, G. M. Tsymbalov, T. V. Teperik… in Bulletin of the Russian Academy of Science… (2007)

  5. No Access

    Article

    Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold

    The percolation threshold p 0 ≈ 0.6 is determined for monodisperse platinum nanostructures with 1.8-nm metallic particles deposited in a monolayer onto an insulating substrate through lase...

    S. L. Rumyantsev, M. E. Levinshteĭn, S. A. Gurevich… in Physics of the Solid State (2006)

  6. No Access

    Article

    The resonant terahertz response of a slot diode with a two-dimensional electron channel

    The terahertz response of a slot diode with a two-dimensional electron channel is calculated on the basis of the first principles of electromagnetism. It is shown that all characteristic electromagnetic length...

    V. V. Popov, G. M. Tsymbalov, M. S. Shur, W. Knap in Semiconductors (2005)

  7. No Access

    Article

    Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure

    The correlation between the noise level 1/f and the degree of mosaic-structure order in gallium nitride epitaxial layers was studied for the first time. Samples with a do** level of N d ...

    N. M. Shmidt, M. E. Levinshtein, W. V. Lundin, A. I. Besyul’kin… in Semiconductors (2004)

  8. No Access

    Article

    Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors

    Magnetotransport characterization of field-effect transistors in view of their application as resonant detectors of THz radiation is presented. Three groups of different transistors based on GaAs/GaAlAs or GaI...

    J. Lusakowski, W. Knap, N. Dyakonova, E. Kaminska… in Physics of the Solid State (2004)

  9. No Access

    Chapter and Conference Paper

    Basic Device Issues in UV Solid-State Emitters and Detectors

    UV light emitting diodes (LEDs) and lasers are expected to find numerous applications in biotechnology, medicine, dentistry, home security, food and air safety technology, short-range covert communications, in...

    M. S. Shur, A. Žukauskas in UV Solid-State Light Emitters and Detectors (2004)

  10. No Access

    Chapter and Conference Paper

    III-Nitride Based UV Light Emiting Diodes

    The development of deep UV LEDs requires growing high quality AlGaN epitaxial layers with high molar fractions of Al. Our Strain Energy Band Engineering approach has considerably improved the quality of such l...

    R. Gaska, M. Asif Khan, M. S. Shur in UV Solid-State Light Emitters and Detectors (2004)

  11. No Access

    Article

    Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas

    The electronic transport and response in the terahertz range are studied in field-effect GaAs/AlGaAs transistors with a two-dimensional high-mobility electron gas. The special interest expressed in such transi...

    A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, S. V. Morozov… in Physics of the Solid State (2004)

  12. No Access

    Chapter and Conference Paper

    Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs

    Attempts to explain the nature of the 1/f noise in AlGaN/GaN HFETs have involved three different mechanisms: occupancy fluctuations of the tail states near the band edges, fluctuations in the space charge regi...

    M. Levinshtein, S. Rumyantsev, M. S. Shur in Advanced Experimental Methods For Noise Re… (2004)

  13. No Access

    Chapter and Conference Paper

    Optical Measurements Using Light-Emitting Diodes

    Recent advances in optical measurements using light-emitting diodes (LEDs) are reviewed. The review covers applications of LEDs as stable and compact sources of light, fluorometry including fluorescence lifeti...

    A. Žukauskas, M. S. Shur, R. Gaska in UV Solid-State Light Emitters and Detectors (2004)

  14. No Access

    Chapter

    Threshold Switching in Chalcogenide-Glass Thin Films

    The application of sufficiently high electric fields to any material eventually results in deviations from linearity in the observed current-voltage I(V) characteristic. There are two general classes of explanati...

    D. Adler, M. S. Shur, M. Silver, S. R. Ovshinsky in Disordered Materials (1991)

  15. No Access

    Chapter

    Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFETs

    Analytical model is proposed which related the transconductance of submicron GaAs MESFET’s to a low field mobility, effective electron saturation velocity and device geometry and do**. The model predicts tha...

    M. S. Shur in The Physics of Submicron Structures (1984)