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Article
Open AccessResonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As \(_x\) P \(_{1-x}\) gate layer
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As ...
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Living Reference Work Entry In depth
Color Rendering Metrics: Status, Methods, and Future Development
Color rendition metrics, which assess light sources in terms of the color quality of illuminated objects, are advancing with the development of lighting technology and with the increasing needs of lighting use...
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Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content
The interplay between nonradiative recombination and carrier localization in Al x Ga1−x N epilayers (0.11 < x < 0.78) was studied using the photoluminesce...
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Chapter and Conference Paper
Recent Results on Broadband Nanotransistor Based THz Detectors
Nanometer size field effect transistors can operate as efficient detectors of terahertz radiation that means far beyond their fundamental cut-of frequency. This work is an overview of some recent results conce...
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Article
Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
We report on non-thermal negative differential conductivity (NDC) in AlGaN/GaN HEMTs grown on sapphire substrates by low-pressure MOCVD. The sheet electron density was on the order of few times 1012cm−2 and the H...
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Resonant properties of the planar plasmonic crystal on a membrane substrate
The theory of the plasmon resonance excitation in the plasmonic-crystal structure on a dielectric substrate is presented. The effect of the plasmon resonance intensity oscillation as a function of the substrat...
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The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN
Photoluminescence of the GaN layers grown both on N-face and Al-face bulk AlN is studied under CW and pulsed laser excitation in the temperature range from 8 K to 300 K. We compare localization of excitons, re...
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Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates
We report on high Al-content AlGaN-based deep UV emitter structures grown over single crystal, slightly off c-axis (5.8 degrees) bulk AlN substrates. AlN/AlGaN multiple quantum well (MQW) structures with up to...
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Electron Transport in the III–V Nitride Alloys
We study electron transport in the alloys of aluminum nitride and gallium nitride and alloys of indium nitride and gallium nitride. In particular, employing Monte Carlo simulations we determine the velocity-fi...
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Article
Pyroelectric and Piezoelectric Properties of Gan-Based Materials
We review pyroelectric and piezoelectric properties of GaN-based materials. Pyroelectric effects in GaN have been studied in two different regimes: (i) uniform sample heating regime and (ii) under applied temp...
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Stimulated Emission at 258 nm in AlN/AlGaN Quantum Wells Grown on Bulk AlN Substrates
We report on observation of stimulated emission at 258 nm in AlN/AlGaN multiple quantum wells. The structures were grown over Al-face single crystal bulk AlN substrates. AlN/AlGaN structures with 50% of Al in ...
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Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel
We present the theory of plasmon excitation in a grating-gate transistor structure with spatially modulated 2D electron channel. The plasmon spectrum varies depending on the electron density modulation in the ...
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Terahertz excitation of the higher-order plasmon modes in field-effect transistor arrays with common and separate two-dimensional electron channels
Using a rigorous electrodynamic approach, the spectra of the terahertz response of periodically ordered arrays of field-effect transistors with two-dimensional electron channel were calculated. It was shown th...
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Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold
The percolation threshold p 0 ≈ 0.6 is determined for monodisperse platinum nanostructures with 1.8-nm metallic particles deposited in a monolayer onto an insulating substrate through lase...
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The resonant terahertz response of a slot diode with a two-dimensional electron channel
The terahertz response of a slot diode with a two-dimensional electron channel is calculated on the basis of the first principles of electromagnetism. It is shown that all characteristic electromagnetic length...
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Article
Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure
The correlation between the noise level 1/f and the degree of mosaic-structure order in gallium nitride epitaxial layers was studied for the first time. Samples with a do** level of N d ...
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Article
Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors
Magnetotransport characterization of field-effect transistors in view of their application as resonant detectors of THz radiation is presented. Three groups of different transistors based on GaAs/GaAlAs or GaI...
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Chapter and Conference Paper
Basic Device Issues in UV Solid-State Emitters and Detectors
UV light emitting diodes (LEDs) and lasers are expected to find numerous applications in biotechnology, medicine, dentistry, home security, food and air safety technology, short-range covert communications, in...
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Chapter and Conference Paper
III-Nitride Based UV Light Emiting Diodes
The development of deep UV LEDs requires growing high quality AlGaN epitaxial layers with high molar fractions of Al. Our Strain Energy Band Engineering approach has considerably improved the quality of such l...
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Article
Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas
The electronic transport and response in the terahertz range are studied in field-effect GaAs/AlGaAs transistors with a two-dimensional high-mobility electron gas. The special interest expressed in such transi...
