Abstract
The correlation between the noise level 1/f and the degree of mosaic-structure order in gallium nitride epitaxial layers was studied for the first time. Samples with a do** level of N d −N a ≈8×1016 cm−3 and a relatively high degree of order were characterized by the Hooge parameter α≈1.5×10−3. This value is unprecedently low for thin GaN epitaxial films. The Hooge parameter was significantly higher for samples with N d −N a ≈1.1×1018 cm−3 and a low degree of order despite the fact that α generally decreases with increasing do** level at the same degree of order. Thus, the degree of mosaic-structure order affects not only the optical and electrical characteristics but also the fluctuation parameters of GaN epitaxial layers.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1036–1038.
Original Russian Text Copyright © 2004 by Shmidt, Levinshte\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)n, Lundin, Besyul’kin, Kop’ev, Rumyantsev, Pala, Shur.
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Shmidt, N.M., Levinshtein, M.E., Lundin, W.V. et al. Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure. Semiconductors 38, 998–1000 (2004). https://doi.org/10.1134/1.1797474
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DOI: https://doi.org/10.1134/1.1797474