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  1. Article

    Open Access

    Geometrical Aberration Suppression for Large Aperture Sub-THz Lenses

    Advanced THz setups require high performance optical elements with large numerical apertures and small focal lengths. This is due to the high absorption of humid air and relatively low efficiency of commercial...

    M. Rachon, K. Liebert, A. Siemion, J. Bomba… in Journal of Infrared, Millimeter, and Terah… (2017)

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  2. No Access

    Chapter and Conference Paper

    Recent Results on Broadband Nanotransistor Based THz Detectors

    Nanometer size field effect transistors can operate as efficient detectors of terahertz radiation that means far beyond their fundamental cut-of frequency. This work is an overview of some recent results conce...

    Wojciech Knap, Dimitry B. But, N. Dyakonova, D. Coquillat… in THz and Security Applications (2014)

  3. No Access

    Chapter

    Terahertz Plasma Field Effect Transistors

    The channel of the field effect transistor can operate as a cavity for plasma waves. For the electrons with high enough mobility, the plasma waves can propagate in field effect transistors (FETs) channel leadi...

    W. Knap, D. Coquillat, N. Dyakonova, D. But… in Physics and Applications of Terahertz Radi… (2014)

  4. No Access

    Article

    Graphene field-effect transistors as room-temperature terahertz detectors

    Its high carrier mobility is one of the factors that makes graphene interesting for electronic and photonic applications at terahertz frequencies. Such possibilities are now further supported by the demonstrat...

    L. Vicarelli, M. S. Vitiello, D. Coquillat, A. Lombardo, A. C. Ferrari… in Nature Materials (2012)

  5. No Access

    Article

    Field effect transistors for terahertz detection - silicon versus III–V material issue

    Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation wit...

    W. Knap, H. Videlier, S. Nadar, D. Coquillat, N. Dyakonova… in Opto-Electronics Review (2010)

  6. No Access

    Article

    Observations of band structure and reduced group velocity in epitaxial GaN–sapphire 2D photonic crystals

    We report experimental results for the band structure of 2-dimensional triangular photonic crystals of air holes in an epitaxial group III–nitride waveguide film. Surface coupling techniques enable the observa...

    D. Coquillat, A. Ribayrol, R.M. De La Rue, M. Le Vassor d’Yerville… in Applied Physics B (2001)

  7. No Access

    Chapter and Conference Paper

    Magnetooptics at Γ and L Points of the Brillouin Zone and Magnetization Studies of Semimagnetic Semiconductors Cd1−xMnxTe and Zn1−xMnxTe with 0.01 < x < 0.73

    Magnetization and magnetoreflectivity measurements at Γ point of B.Z. were performed in magnetic field up to 5.5T i) at 4.2K for 0.02 < x < 0.73. An anomalous behavior for high concentration is explained in te...

    D. Coquillat, J. P. Lascaray, A. Benhida… in High Magnetic Fields in Semiconductor Phys… (1989)

  8. No Access

    Article

    Magnetic Contribution to the Energy Gap of Zn1−xMnxTe

    Systematic masurements of energy gap and magnetic susceptibility of Zn1−xMnxTe in a composition range from 0 to 0.703 Mn mole fraction were performed as a function of temperature. The results show that the magnet...

    J. A. Gaj, A. Golnik, J. P. Lascaray, D. Coquillat… in MRS Online Proceedings Library (1986)

  9. No Access

    Article

    Ion - Carrier Exchange Interaction in Cd1−xMnxS

    Magnetoreflectivity measurements in Faraday and Voigt geometry in the free exciton region (A, B and C excitons are visible) were performed on Cd0.07Mn0.13S at T=1.6 K for magnetic field up to 5.5 T. An analysis o...

    M. Nawrocki, J. P. Lascaray, D. Coquillat, M. Demianiuk in MRS Online Proceedings Library (1986)