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  1. No Access

    Article

    Low Frequency Noise and Resistance in Non-Passivated InAsSbP/InAs based Photodiodes in the Presence of Atmosphere with Ethanol Vapor

    low frequency noise and electrical characteristics of the p-InAsSbP/n-InAs single photodiode heterostructures grown onto n+-InAs substrates have been measured in the presence of atmosphere containing ethanol vapo...

    M. E. Levinshtein, B. A. Matveev, N. Dyakonova in Technical Physics Letters (2023)

  2. No Access

    Chapter and Conference Paper

    Recent Results on Broadband Nanotransistor Based THz Detectors

    Nanometer size field effect transistors can operate as efficient detectors of terahertz radiation that means far beyond their fundamental cut-of frequency. This work is an overview of some recent results conce...

    Wojciech Knap, Dimitry B. But, N. Dyakonova, D. Coquillat… in THz and Security Applications (2014)

  3. No Access

    Chapter

    Terahertz Plasma Field Effect Transistors

    The channel of the field effect transistor can operate as a cavity for plasma waves. For the electrons with high enough mobility, the plasma waves can propagate in field effect transistors (FETs) channel leadi...

    W. Knap, D. Coquillat, N. Dyakonova, D. But… in Physics and Applications of Terahertz Radi… (2014)

  4. No Access

    Article

    Field effect transistors for terahertz detection - silicon versus III–V material issue

    Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation wit...

    W. Knap, H. Videlier, S. Nadar, D. Coquillat, N. Dyakonova… in Opto-Electronics Review (2010)

  5. No Access

    Chapter and Conference Paper

    TeraHertz Emission From Nanometric HEMTs Analyzed by Noise Spectra

    Recent experiments have shown that High Electron Mobility Transistors can emit electromagnetic radiation in the TeraHertz range. The emission spectra exhibit two peaks: one around 1 THz is sensitive to drain a...

    J. -F. Millithaler, L. Varani, C. Palermo… in Nonequilibrium Carrier Dynamics in Semicon… (2006)

  6. No Access

    Article

    Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors

    Magnetotransport characterization of field-effect transistors in view of their application as resonant detectors of THz radiation is presented. Three groups of different transistors based on GaAs/GaAlAs or GaI...

    J. Lusakowski, W. Knap, N. Dyakonova, E. Kaminska… in Physics of the Solid State (2004)

  7. No Access

    Article

    Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas

    The electronic transport and response in the terahertz range are studied in field-effect GaAs/AlGaAs transistors with a two-dimensional high-mobility electron gas. The special interest expressed in such transi...

    A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, S. V. Morozov… in Physics of the Solid State (2004)

  8. No Access

    Article

    Low Frequency Noise In n-Type Gallium Nitride

    Low frequency noise has been investigated in hexagonal n-type GaN with equilibrium electron concentration n ∼ 1017 cm−3 at T=300 K. The frequency and temperature dependencies of the spectral density of the curren...

    N. Dyakonova, M. Levinshtein, S. Contreras, W. Knap… in MRS Online Proceedings Library (1998)