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Article
Open AccessPath toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent...
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Article
Nanoscale domain wall devices with magnetic tunnel junction read and write
The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current approaches for reading and writing domain walls require ...
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Article
Open AccessPositive non-linear capacitance: the origin of the steep subthreshold-slope in ferroelectric FETs
We show that the non-linear positive capacitance (PC) of ferroelectrics (FE) can explain the steep subthreshold-slope (SS) observed in FE based MOSFETs and often attributed to the existence of a negative capac...
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Article
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
We present a review of our recent studies of Bias Temperature Instability (BTI) in Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) fabricated with different material systems, highlighting the reli...
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Article
Effect of Al-content and Post Deposition Annealing on the Electrical Properties of Ultra-thin HfAlxOy Layers
Scaled HfAlxOy/SiO2 stacks down to 1.5 nm EOT have been achieved. Although the addition of Al to the HfO2 matrix can be beneficial, it is observed that the benefit of using a Hf-aluminate is compromised if the fi...
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Article
The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
Hafnium-based dielectrics are under wide consideration for high-K gate dielectric applications. Since the gate electrode typically used in CMOS integration consists of polysilicon with n- or p-type dopants, co...
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Article
Thermal Stability of High k Layers
Thermal stability of amorphous phases in various high-k layers (Al2O3, ZrO2, HfO2, ZrAlOx, HfAlOx and HfSiOx) and the phase transformation of crystalline ZrO2 and HfO2 were studied experimentally, as functions of...
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Article
Catalytic Forming Gas Anneal on III-V/Ge MOS systems
Catalytic-FGA, a combination of the standard forming gas anneal with a catalytic metal gate, has been applied to study the hydrogen passivation of III-V/Ge MOS systems. Pd (or Pt) metal gate catalytically diss...
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Article
Seedless Templated Growth of Hetero-Nanostructures for Novel Microelectronics Devices
The feasibility of a templated seedless approach for growing segmented p-i-n nanowires -based diodes based on selective epitaxial growth is demonstrated. Such diodes are the basic structure for a Tunnel Field ...
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Article
Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
Over the years, many new materials have been introduced in advanced complementary metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the gate length and increasing the perfor...
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Chapter
Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates
A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-κ dielectric deposition to obtain low interface state density and high carrier mobility. A...
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Chapter
Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow
For the first time MOSFET transistor performance featuring dielectric Lanthanum Hafnium Oxide (LHO) deposited by molecular beam epitaxy are presented. These dielectrics were deposited on a SiO2-like surface and i...
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Chapter and Conference Paper
IMPACT OF HIGH-κ PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS
The integration of high-κ dielectrics in MOSFET devices is beset by many problems. In this paper a review on the impact of defects in high-κ materials on the MOSFET electrical characteristics is presented. Bes...
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Article
(Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices
Tensile strained Si on SiGe Strain Relaxed Buffers (SRB) is an interesting candidate to increase both electron and hole mobility which results in improved device performance. Most of this work was/is based on ...
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Article
Physical characterization of HfO2 deposited on Ge substrates by MOCVD
Germanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically uns...
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Article
Physical characterization of HfO2deposited on Ge substrates by MOCVD.
Germanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically uns...
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Article
High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies
In the quest for ever smaller transistor dimensions, the well-known and reliable SiO2 gate dielectric material needs to be replaced by alternatives whith higher dielectric constants in order to reduce the gate le...
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Article
The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
Hafnium-based dielectrics are under wide consideration for high-K gate dielectric applications. Since the gate electrode typically used in CMOS integration consists of polysilicon with n- or p-type dopants, co...
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Article
Influence of pre and post process conditions on the composition of thin Si3N4 thin Alms (3 nm) studied by XPS and TOFSIMS
With the downscaling of the electronic devices and the increase in the frequency of the electronic circuits, a large search for new gate dielectric is ongoing. The exact composition and element distribution in...
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Article
Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown
For sub-5 nm oxides there are two different stages for breakdown; soft breakdown (SBD) and hard breakdown (HBD). It has been shown that both SBD and HBD exhibit the same statistics. Therefore, the physical mec...
