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  1. Article

    Open Access

    Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer

    The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces several challenges, among which is realizing uniform material deposition on the 2D surface. Typical strategies to enabl...

    P.-J. Wyndaele, J.-F. de Marneffe, S. Sergeant… in npj 2D Materials and Applications (2024)

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  2. Article

    Open Access

    Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

    The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is studied in a periodic mesoporous oxide (PMO) with ∼34 % porosity and k-value ∼2.3. At a partial pressure of 3 mT, the ons...

    R. Chanson, L. Zhang, S. Naumov, Yu. A. Mankelevich, T. Tillocher… in Scientific Reports (2018)

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  3. Article

    Open Access

    Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization

    A low-temperature electron spin resonance study has been carried out on large-area high-purity polycrystalline two-dimensional few monolayer (ML) 2H MoS2 films synthesized by sulfurization of Mo layers, with inte...

    A. Stesmans, S. Iacovo, D. Chiappe, I. Radu, C. Huyghebaert… in Nanoscale Research Letters (2017)

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  4. No Access

    Article

    Physcial characterization of ultrathin high k dielectrics

    Targeting very thin equivalent oxides (<1 nm) requires the deposition of (very) thin dielectrica onto silicon surfaces with minimal interfacial oxide. Typically, high-k dielectric layers are deposited using AL...

    W. Vandervorst, B. Brijs, H. Bender, O. T. Conard… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    ALD HfO2 surface preparation study

    A fast screening technique is used to study the ALD HfO2 growth behavior on different types of starting surfaces (H-passivated, chemical oxide, thermal oxide). The amount of Hf deposited at the early stages of th...

    Annelies Delabie, M. Caymax, J. W. Maes, P. Bajolet… in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon

    This paper discusses metal organic chemical vapor deposited (MOCVD) HfO2 layers using tetrakis(diethylamido)hafnium (TDEAH) as precursor. We have studied the influence of the starting surface and deposition tempe...

    S. Van Elshocht, M. Caymax, S. De Gendt, T. Conard… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Thermal Stability of High k Layers

    Thermal stability of amorphous phases in various high-k layers (Al2O3, ZrO2, HfO2, ZrAlOx, HfAlOx and HfSiOx) and the phase transformation of crystalline ZrO2 and HfO2 were studied experimentally, as functions of...

    C. Zhao, V. Cosnier, P. J. Chen, O. Richard, G. Roebben… in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy

    Strongly confined nano-systems, such as one-dimensional nanowires, feature deviations in their structural, electronic and optical properties from the corresponding bulk. In this work, we investigate the behav...

    M. Cantoro, A. V. Klekachev, A. Nourbakhsh, B. Sorée… in The European Physical Journal B (2011)

  9. No Access

    Article

    Seedless Templated Growth of Hetero-Nanostructures for Novel Microelectronics Devices

    The feasibility of a templated seedless approach for growing segmented p-i-n nanowires -based diodes based on selective epitaxial growth is demonstrated. Such diodes are the basic structure for a Tunnel Field ...

    F. Iacopi, R. Rooyackers, R. Loo, W. Vanherle, A. Milenin… in MRS Online Proceedings Library (2009)

  10. No Access

    Article

    The preperitoneal memory-ring patch for inguinal hernia: a prospective multicentric feasibility study

    To evaluate the feasibility, the reproducibility, the safety and the efficacy of a recently introduced preperitoneal memory-ring patch (Polysoft®, Davol Inc., C.R. Bard Inc., Crawley, UK) by a prospective multice...

    F. Berrevoet, C. Sommeling, S. De Gendt, C. Breusegem, B. de Hemptinne in Hernia (2009)

  11. No Access

    Article

    Thermally-Stable High Effective Work Function TaCN and Ta2N Films for pMOS Metal Gate Applications

    TaCN-based metal films were grown by metal-organic chemical-vapor deposition (MOCVD) and atomic vapor-deposition (AVD). Thermal decomposition at 500ºC leads to com-positions of approximately Ta0.50C0.4N0.1 (“TaCN...

    C. Adelmann, P. Lehnen, L.-Å. Ragnarsson, T. Conard… in MRS Online Proceedings Library (2008)

  12. No Access

    Chapter and Conference Paper

    Electron Energy-Loss Spectrum Imaging of an HfSiO High-k Dielectric Stack with a TaN Metal Gate

    A Si(100)/SiO2/HfSiO/TaN/poly-Si gate stack is investigated using analytical electron microscopy and, in particular, electron energy-loss spectroscopy. Oxygen is shown to be present in the TaN layer and at the Ta...

    M MacKenzie, A J Craven, D W McComb… in Microscopy of Semiconducting Materials 2007 (2008)

  13. No Access

    Chapter and Conference Paper

    EELS analyses of metal-inserted high-k dielectric stacks

    Hf-based systems are going into production this year as the high-k materials replacing amorphous SiO2 and Si(O,N) as the gate dielectric in Si MOSFETs. At the same time, metal inserted poly-Si gate electrodes are...

    M. MacKenzie, A. J. Craven, D. W. McComb… in EMC 2008 14th European Microscopy Congress… (2008)

  14. No Access

    Chapter and Conference Paper

    Nucleation, Crystallisation and Phase Segregation in HfO2 and HfSiO

    Hafnia and hafnium silicate thin films and bulk powders were analysed using thermal analysis, X-ray diffraction and transmission electron microscope techniques to improve understanding of the crystallisation m...

    C M McGilvery, S McFadzean, M MacKenzie… in Microscopy of Semiconducting Materials 2007 (2008)

  15. No Access

    Chapter

    Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow

    For the first time MOSFET transistor performance featuring dielectric Lanthanum Hafnium Oxide (LHO) deposited by molecular beam epitaxy are presented. These dielectrics were deposited on a SiO2-like surface and i...

    L. Pantisano, T. Conard, T. Scram… in Advanced Gate Stacks for High-Mobility Sem… (2007)

  16. No Access

    Article

    Physical characterization of HfO2 deposited on Ge substrates by MOCVD

    Germanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically uns...

    S. Van Elshocht, B. Brijs, M. Caymax, T. Conard… in MRS Online Proceedings Library (2003)

  17. No Access

    Article

    Physical characterization of HfO2deposited on Ge substrates by MOCVD.

    Germanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically uns...

    S. Van Elshocht, B. Brijs, M. Caymax, T. Conard… in MRS Online Proceedings Library (2003)

  18. No Access

    Article

    Scalability of MOCVD-deposited Hafnium Oxide

    Because of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a co...

    S. Van Elshocht, R. Carter, M. Caymax, M. Claes… in MRS Online Proceedings Library (2003)

  19. No Access

    Article

    The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration

    Hafnium-based dielectrics are under wide consideration for high-K gate dielectric applications. Since the gate electrode typically used in CMOS integration consists of polysilicon with n- or p-type dopants, co...

    V. S. Kaushik, S. De Gendt, R. Carter, M. Claes, E. Rohr… in MRS Online Proceedings Library (2003)

  20. No Access

    Article

    Silicon Surface Metal Contamination Measurements using Grazing-Emission XRF Spectrometry

    Grazing-Emission X-Ray Fluorescence Spectrometry (GEXRF) is a new analytical X-ray fluorescence technique, which like TXRF takes advantage of the total-reflection phenomenon. The main advantage of GEXRF over T...

    S. De Gendt, K. Kenis, M. Baeyens, P. W. Mertens… in MRS Online Proceedings Library (1997)