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  1. No Access

    Article

    High Mobility Channel Materials and Novel Devices for Scaling of Nanoeelectronics beyond the Si Roadmap

    The use of high mobility channel materials such as Ge and III/V compounds and some novel device concepts are being explored for future CMOS applications. Various passivation schemes are investigated for the Ge...

    Marc Heyns, Florence Bellenger, Guy Brammertz… in MRS Online Proceedings Library (2009)

  2. No Access

    Article

    Alternative Catalysts For Si-Technology Compatible Growth Of Si Nanowires

    The use of Au nanoparticles as catalysts for growth of Si nanowires poses fundamental reliability concerns for applications in Si semiconductor technology. In this work we show that the choice of catalysts can...

    Francesca Iacopi, Philippe M Vereecken, Marc Schaekers… in MRS Online Proceedings Library (2007)

  3. No Access

    Article

    Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films

    Ultrathin lanthanide (Nd, Pr, Eu, Sm) oxide films with functional dielectric properties down to 3.3 nm thickness were deposited by aqueous chemical solution deposition (CSD) onto hydrophilic SiO2/Si substrates. P...

    An Hardy, Sven Van Elshocht, Jan D’Haen, Olivier Douhéret… in Journal of Materials Research (2007)

  4. No Access

    Article

    Thermal Stability of Thin Virtual Substrates for High Performance Devices

    Detailed investigations of strain generation and relaxation in Si films grown on thin Si0.78Ge0.22 virtual substrates using Raman spectroscopy are presented. Good virtual substrate relaxation (>90%) is achieved b...

    Sarah H. Olsen, Steve J. Bull, Peter Dobrosz… in MRS Online Proceedings Library (2006)

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    Chapter and Conference Paper

    Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources

    The strain relaxation process of pseudomorphic SiGe/Si(100) heterostructures has been investigated by ex-situ and in-situ transmission electron microscopy, Rutherford backscattering spectroscopy and ion channe...

    Norbert Hueging, Martina Luysberg, Knut Urban… in Microscopy of Semiconducting Materials (2005)

  6. No Access

    Article

    High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies

    In the quest for ever smaller transistor dimensions, the well-known and reliable SiO2 gate dielectric material needs to be replaced by alternatives whith higher dielectric constants in order to reduce the gate le...

    Matty Caymax, H. Bender, B. Brijs, T. Conard, S. DeGendt… in MRS Online Proceedings Library (2003)

  7. No Access

    Article

    Characterization of Reduced-pressure Chemical Vapor Deposition Polycrystalline Silicon Germanium Deposited at Temperatures ≤550 °C

    This paper investigates the possibility of reducing the deposition temperature of polycrystalline silicon germanium to a level compatible with complementary metal-oxide semiconductor (CMOS) post processing To ...

    Sherif Sedky, Ann Witvrouw, Matty Caymax, Annelies Saerens… in Journal of Materials Research (2002)

  8. No Access

    Article

    Ge Island evolution during growth, in-situ anneal, and Si cap** in an industrial CVD reactor

    Si based nanostructures such as Ge or Si1-xGex dots embedded in Si receive a lot of attention. This interest is driven by the reduction of device sizes as well as by their possible use in opto-electronic applicat...

    Roger Loo, Philippe Meunier-Beillard, Didier Dentel… in MRS Online Proceedings Library (2000)

  9. No Access

    Article

    Effect of Deposition Conditions on the Structural and Mechanical Properties of Poly SiGe

    MicroElectroMechanical Systems (MEMS) are used in a wide variety of applications such as accelerometers [1], gyroscopes [2], infrared detectors [3],…etc. For high volume applications, fabrication costs can be ...

    Sherif Sedky, Ann Witvrouw, Matty Caymax… in MRS Online Proceedings Library (2000)