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Article
Physcial characterization of ultrathin high k dielectrics
Targeting very thin equivalent oxides (<1 nm) requires the deposition of (very) thin dielectrica onto silicon surfaces with minimal interfacial oxide. Typically, high-k dielectric layers are deposited using AL...
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Article
Effect of Al-content and Post Deposition Annealing on the Electrical Properties of Ultra-thin HfAlxOy Layers
Scaled HfAlxOy/SiO2 stacks down to 1.5 nm EOT have been achieved. Although the addition of Al to the HfO2 matrix can be beneficial, it is observed that the benefit of using a Hf-aluminate is compromised if the fi...
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Article
The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
Hafnium-based dielectrics are under wide consideration for high-K gate dielectric applications. Since the gate electrode typically used in CMOS integration consists of polysilicon with n- or p-type dopants, co...
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Article
Catalytic Forming Gas Anneal on III-V/Ge MOS systems
Catalytic-FGA, a combination of the standard forming gas anneal with a catalytic metal gate, has been applied to study the hydrogen passivation of III-V/Ge MOS systems. Pd (or Pt) metal gate catalytically diss...
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Article
Growth and Layer Characterization of SrTiO3 by Atomic Layer Deposition using Sr(tBu3Cp)2 and Ti(OMe)4
Strontium titanate (STO) thin films (45-67 % Sr) were deposited by atomic layer deposition using Sr(tBu3Cp)2/Ti(OMe)4/H2O as precursors. The Sr content of the layers is well controlled by the precursor pulse rati...
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Chapter
Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates
A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-κ dielectric deposition to obtain low interface state density and high carrier mobility. A...
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Article
On the Nature of Weak Spots in High-k Layers Submitted to Anneals
In the path to the introduction of high-k dielectric into IC components, a large number of challenges have still to be solved. Some of the major issues concern the low mobility of carriers and the reliability ...
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Article
High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies
In the quest for ever smaller transistor dimensions, the well-known and reliable SiO2 gate dielectric material needs to be replaced by alternatives whith higher dielectric constants in order to reduce the gate le...
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Article
The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
Hafnium-based dielectrics are under wide consideration for high-K gate dielectric applications. Since the gate electrode typically used in CMOS integration consists of polysilicon with n- or p-type dopants, co...
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Chapter
Local Site Deformations in Zeolites by the Coordination of Cu(II)
The electronic and ESR spectra of Cu(II)-exchanged zeolites were interpreted by means of ab initio calculations. The Cu(II) coordination in the crystal sites was studied by partial geometry optimizations of Cu(II...
