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Article
Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack
We report the first successful application of corona charging noncontact C-V and I-V metrology to interface and dielectric characterization of high-k/III-V structures. The metrology, which has been commonly us...
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Article
Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs
The chemical and electrical characteristics of atomic layer deposited (ALD) beryllium oxide (BeO) on GaN were studied via x-ray photoelectron spectroscopy, current–voltage, and capacitance–voltage measurements...
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Chapter
Materials and Technologies for III-V MOSFETs
The paper contains an overview of progress and challenges of group III-V MOSFETs. It begins with comparison of well-established high-electron mobility transistors for logic applications to MOSFET technology. F...
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Article
Catalytic Forming Gas Anneal on III-V/Ge MOS systems
Catalytic-FGA, a combination of the standard forming gas anneal with a catalytic metal gate, has been applied to study the hydrogen passivation of III-V/Ge MOS systems. Pd (or Pt) metal gate catalytically diss...
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Article
High Mobility Channel Materials and Novel Devices for Scaling of Nanoeelectronics beyond the Si Roadmap
The use of high mobility channel materials such as Ge and III/V compounds and some novel device concepts are being explored for future CMOS applications. Various passivation schemes are investigated for the Ge...