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  1. No Access

    Article

    Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

    Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al x Ga1−x N-based deep-ultraviolet laser-di...

    M.A. Miller, M.H. Crawford, A.A. Allerman, K.C. Cross… in Journal of Electronic Materials (2009)

  2. No Access

    Article

    Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N

    Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-Al0.58Ga0.42N. The reaction depth of low-resistance V-based ...

    M.A. Miller, B.H. Koo, K.H.A. Bogart, S.E. Mohney in Journal of Electronic Materials (2008)

  3. No Access

    Article

    Advances in AlGaN-based Deep UV LEDs

    Materials studies of high Al-content (> 30%) AlGaN epilayers and the performance of AlGaN-based LEDs with emission wavelengths shorter than 300 nm are reported. N-type AlGaN films with Al compositions greater ...

    M. H. Crawford, A. A. Allerman, A. J. Fischer… in MRS Online Proceedings Library (2004)

  4. No Access

    Article

    Junction Temperature Measurements in Deep-UV Light-Emitting Diodes

    The junction temperature of AlGaN/GaN ultraviolet (UV) Light-Emitting Diodes (LEDs) emitting at 295 nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. T...

    Y. **, J.-Q. **, Th. Gessmann, J. M. Shah, J. K. Kim… in MRS Online Proceedings Library (2004)