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Article
Transition Metal–MoS2 Reactions: Review and Thermodynamic Predictions
Molybdenum disulfide is a layered transition-metal dichalcogenide semiconductor that is attracting renewed attention for its potential use in future nanoscale electronics, optoelectronics, catalysis, tribology...
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Article
Silicide formation in contacts to Si nanowires
Silicides, intermetallic compounds formed by the reaction of a metal and Si, have long been used as contacts for metal oxide semiconductor (CMOS) transistors and have more become interesting for other Si nanow...
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Article
Improved Stability of Pd/Ti Contacts to p-Type SiC Under Continuous DC and Pulsed DC Current Stress
The enhanced stability of Pd/Ti contacts to p-type SiC under high-current-density continuous direct-current (DC) stressing is investigated and compared with previous work on Ti/Al contacts. Additionally, differin...
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Article
The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al 0.4Ga 0.6N
As the group III nitride semiconductor technology matures, an increasing number of devices are being fabricated with high Al fraction AlGaN. In this study, ohmic behavior is achieved using Ti/Al/Pt/Au contacts...
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Article
Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance
The influence of composition on Al-Ti ohmic contacts to 4H p-SiC was studied. When NA was 7 x 1018 cm−3, contacts with 70 wt.% or more Al became ohmic when annealed at 1000°C for 2 min, whereas when there was 60 ...
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Article
Current-Induced Degradation of Nickel Ohmic Contacts to SiC
The stability of Ni ohmic contacts to p-type SiC under high current density was investigated. A test structure adapted from the four circular contacts method allowed for vertical stressing and the ability to extr...
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Article
Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N
Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-Al0.58Ga0.42N. The reaction depth of low-resistance V-based ...
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Article
Solid-state phase formation between Pd thin films and GaSb
Knowledge of the interaction between a thin metal film and a compound semiconductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm laye...
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Article
Environmental sensitivity of Au diodes on n-AlGaN
With growing interest in AlGaN for ultraviolet detectors and high-power/high-temperature electronic devices, the problem of forming high-quality Schottky contacts to this semiconductor has become increasingly ...
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Article
Foreword
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Article
Thermodynamic modeling of the Ni–Al–Ga–N system
Isothermal sections in the Ni–Al–Ga–N quaternary phase diagram were calculated to provide a greater understanding of interfacial reactions between Ni contacts and AlxGa1−xN. The calculations were performed employ...
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Article
Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N
Four vanadium-based contacts to n-type Al0.6Ga0.4N were compared in this work. Both V/Al/Pd/Au and V/Al/V/Au contacts with optimized layer thicknesses provided lower specific-contact resistances than did the prev...
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Article
Foreword
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Article
Intermetallic growth between lead-free solders and palladium
Intermetallic growth between Pd and the lead-free solders Sn-Ag and Sn-Ag-Cu has been studied. Diffusion couples were prepared by reflowing the solders on Pd and then aging the couples at 156°C, 175°C, 195°C, ...
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Article
Condensed phase equilibria in transition metal-Ga-Sb systems and predictions for thermally stable contacts to GaSb
Antimonide-based compound semiconductors are promising candidates for high-frequency, low-power electronic devices as well as a variety of optoelectronic devices. To assist with the design of shallow or therma...
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Article
Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN
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Article
Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN
As a first step in predicting the phase equilibria in TM-Al-Ga-N systems, where TM denotes a transition metal from the first three transition series, phase equilibria are calculated in the TM-Al-N systems, and...
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Article
Wet thermal oxidation of GaN
Thermal oxidation of GaN was conducted at 700–900°C with O2, N2, and Ar as carrier gases for 525–630 Torr of H2O vapor. Upon oxidation of both GaN powders and n-GaN epilayers, the monoclinic β-Ga2O3 phase was ide...
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Article
Refractory metal boride ohmic contacts to P-type 6H-SiC
Ohmic contacts have been fabricated on p-type 6H-SiC (1.3×1019 cm−3) using CrB2, W2B, and TiB2. The boride layers (∼100–200 nm) were sputter-deposited in a system with a base pressure of 3×10−7 Torr. Specific con...
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Article
Thermally Stable Schottky Contacts to n-GaN
The barrier heights of Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The elemental Ni contacts were also investigated for com...