Skip to main content

2 Result(s)

within K.C. Cross Remove this filter

and

  1. No Access

    Article

    Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current

    Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown

    G. W. Pickrell, A. M. Armstrong, A. A. Allerman… in Journal of Electronic Materials (2019)

  2. No Access

    Article

    Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

    Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al x Ga1−x N-based deep-ultraviolet laser-di...

    M.A. Miller, M.H. Crawford, A.A. Allerman, K.C. Cross… in Journal of Electronic Materials (2009)