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  1. No Access

    Article

    Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current

    Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown

    G. W. Pickrell, A. M. Armstrong, A. A. Allerman… in Journal of Electronic Materials (2019)

  2. No Access

    Article

    Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1−x N

    High hole concentrations in Al x Ga1−x N become increasingly difficult to obtain as the Al mole fraction increases. The problem is believed to be related ...

    U. R. Sunay, M. E. Zvanut, A. A. Allerman in Journal of Electronic Materials (2015)

  3. No Access

    Article

    Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

    Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGa1−xAs layers (× = 0.1 to 1.0) showed that the epitaxial growth method does not influence the oxidation rate. Nearly identical oxidation depths were m...

    Y. Chen, A. Roshko, K. A. Bertness, D. W. Readey… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    The Role of Nitrogen-Induced Localization and Defects in InGaAsN (≈ 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    Nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor dep...

    Steven R. Kurtz, A. A. Allerman, J. F. Klem, R. M. Sieg… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Characterization of Dark-Block Defects in Cantilever Epitaxial GaN on Sapphire

    Cantilever epitaxy of GaN on sapphire has been augmented by the use of initial facetted GaN growth on narrow sapphire mesas (< 1μm) in order to turn remaining threading dislocations from vertical to horizontal...

    P. P. Provencio, D. M. Follstaedt, N. A. Missert… in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Determination of AlGaN/GaN HFET Electric Fields using Electroreflectance

    A contacted electroreflectance technique was used to characterize the electronic properties of AlGaN/GaN heterostructure field-effect transistors (HFETs). By studying variations in the electroreflectance with ...

    S. R. Kurtz, A. A. Allerman, D. D. Koleske, A. G. Baca… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density

    The density of vertical threading dislocations at the surface of GaN grown on sapphire by cantilever epitaxy has been reduced with two new approaches. First, narrow mesas (<1 μm wide) were used and (11–22) fac...

    D. M. Follstaedt, P. P. Provencio, D. D. Koleske… in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Comparison of deep level spectra of MBE- and MOCVD-grown InGaAsN

    Deep level transient spectroscopy (DLTS) studies of both p-type (uid) and n-type (Sidoped), lattice-matched, 1.05 eV bandgap InGaAsN grown by molecular-beam epitaxy (MBE) are reported, and the results are compare...

    R. J. Kaplar, S. A. Ringel, Steven R. Kurtz… in MRS Online Proceedings Library (2011)

  9. No Access

    Article

    Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

    Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al x Ga1−x N-based deep-ultraviolet laser-di...

    M.A. Miller, M.H. Crawford, A.A. Allerman, K.C. Cross… in Journal of Electronic Materials (2009)

  10. No Access

    Article

    Advances in AlGaN-based Deep UV LEDs

    Materials studies of high Al-content (> 30%) AlGaN epilayers and the performance of AlGaN-based LEDs with emission wavelengths shorter than 300 nm are reported. N-type AlGaN films with Al compositions greater ...

    M. H. Crawford, A. A. Allerman, A. J. Fischer… in MRS Online Proceedings Library (2004)

  11. No Access

    Article

    Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques

    Forward-to-reverse bias step-recovery measurements were performed on In.07Ga.93N/GaN and Al.36Ga.64N/Al.46Ga.54N quantum-well (QW) light-emitting diodes grown on sapphire. With the QW sampling the minority-carrie...

    R. J. Kaplar, S. R. Kurtz, D. D. Koleske, A. A. Allerman… in MRS Online Proceedings Library (2004)

  12. No Access

    Article

    Junction Temperature Measurements in Deep-UV Light-Emitting Diodes

    The junction temperature of AlGaN/GaN ultraviolet (UV) Light-Emitting Diodes (LEDs) emitting at 295 nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. T...

    Y. **, J.-Q. **, Th. Gessmann, J. M. Shah, J. K. Kim… in MRS Online Proceedings Library (2004)

  13. No Access

    Article

    The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor deposition

    We describe the metal-organic chemical vapor deposition (MOCVD) growth of InAsSb/InAs and GaAsSb/GaAs(P) multiple quantum well (MQW) and InAsSb/InAsP and InAsSb/InPSb strained-layer superlattice (SLS) active r...

    R. M. Biefeld, A. A. Allerman, S. R. Kurtz… in Journal of Materials Science: Materials in… (2002)

  14. No Access

    Article

    Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers

    Distributed Bragg reflectors (DBRs) not only serve as high-reflectance mirrors to define the laser cavity of a vertical-cavity surface-emitting laser (VCSEL), but they also must conduct electricity, confine cu...

    W. G. Breiland, A. A. Allerman, J. F. Klem, K. E. Waldrip in MRS Bulletin (2002)

  15. No Access

    Article

    Time-Resolved Photoluminescence Studies of InxGa1−xAs1−yNy

    Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in InxGa1−xAs1−yNy (x ∼ 0.03, y ∼ 0.01) epilayers grown on GaAs by metalorganic chemical vapor deposition. Time-res...

    M. Smith, R. A. Mair, J. Y. Lin, H. X. Jiang, E. D. Jones… in MRS Online Proceedings Library (2000)

  16. No Access

    Article

    Deep Level Defect Studies in Mocvd-Grown InxGa1−sAs1−yNy Films Lattice-Matched to GaAs

    Deep level defects in MOCVD-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs were investigated using deep level transient spectroscopy (DLTS) measurements. As-grown p-InGaAsN showed broad...

    Daewon Kwon, R. J. Kaplar, J. J. Boeckl, S. A. Ringel… in MRS Online Proceedings Library (1998)

  17. No Access

    Article

    The growth of AlInSb by metalorganic chemical vapor deposition

    We have grown AlxIn1−xSb epitaxial layers by metalorganic chemical vapor deposition using tritertiarybutylaluminum (TTBAl), trimethylindium (TMIn), and triethylantimony (TESb) as sources in a high speed rotating ...

    R. M. Biefeld, A. A. Allerman, K. C. Baucom in Journal of Electronic Materials (1998)

  18. No Access

    Article

    Recent Progress in the Growth of Mid-ir Emitters by Metalorganic Chemical Vapor Deposition

    We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb...

    R. M. Biefeld, A. A. Allerman, S. R. Kurtz, K. C. Baucom in MRS Online Proceedings Library (1997)

  19. No Access

    Article

    The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

    We describe the metalorganic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500°C, and 200 Torr in a horiz...

    R. M. Biefeld, A. A. Allerman, S. R. Kurtz… in Journal of Electronic Materials (1997)

  20. No Access

    Article

    The metalorganic chemical vapor deposition growth of AlAsSb and InAsSb/lnAs using novel source materials for Infrared Emitters

    We have grown AlSb and ALAsxSb1-x epitaxial layers by metalorganic chemical vapor deposition (MOCVD) using trimethylamine or ethyldimethylamine alane, triethylantimony, and arsine. These layers were successfully ...

    R. M. Biefeld, S. R. Kurtz, A. A. Allerman in Journal of Electronic Materials (1997)

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