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Article
Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization
The diffusion barrier properties for ultrathin Ru/Ta and Ru/TaN bilayer structure as the copper diffusion barrier are compared. Cu, Ru, Ta and TaN thin films are deposited by using the ion beam sputtering tech...
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Article
Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction
A multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by...
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Article
Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film
Ultra-thin epitaxial CoSi2 films formed by Co(3∼5nm)/Ti(1 nm)/Si(100) and Co(3∼5nm)/Si(lnm)/Ti(Inm)/Si are studied. The multilayers are deposited by ion-beam sputtering. Rapid thermal annealing (RTA) is used for ...
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Article
A Beem Study of PtSi Schottky Contacts on Ion-Milled Si
Ballistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky con...
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Article
Study on Thermal Stability of Thin CoSi2 Film
The thermal stability of thin CoSi2 films formed from four layered structures: Co/Si, TiN/Co/Si, Co/Ti/Si and TiN/Co/Ti/Si has been studied using four-point-probe (FPP), TEM and RBS/channeling. It is found that t...
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Article
Do** properties of the Ion-Beam-Sputtered SiGe Film
The ion-beam-sputtered polycrystalline SiGe film and its do** properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activa...
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Article
Epitaxial Growth of CoSi2/Si Hetero-Structure by Solid State Interaction of Co/Ti/Si Multilayer
A new method of epitaxial growth of CoSi2 film on Si substrate by ternary solid state interaction is investigated. XRD, RBS and TEM show that single-crystalline CoSi2 can be formed on both Si (111) and (100) subs...
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Article
Preferential Growth of CoSi2 in Co/Si Solid State Interaction by Rapid Thermal Annealing
The CoSi2 thin film growth by Co/Si solid state interaction was investigated. The electrical and crystal properties of the films formed on (111) and (100) Si substrates were characterized after a rapid thermal an...