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Article
Resistive Switching in Metal–Oxide–Semiconductor Structures with GeSi Nanoislands on a Silicon Substrate
It is shown that self-forming GeSi nanoislands built into the dielectric–semiconductor interface in the Si(001)-based metal–oxide–semiconductor (MOS) structures with the SiOx and ZrO2(Y) dielectric layers obtaine...
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Article
Electrophysical Characteristics of Multilayer Memristive Nanostructures Based on Yttria-Stabilized Zirconia and Tantalum Oxide
The electrophysical characteristics of a multilayer memristive Au/Ta/ZrO2(Y)/TaOx/TiN structure have been studied. Electron and ion electret effects due to charge carrier trap** and ion migration polarization i...
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Article
Phase Diagrams of Thin Disordered Films Based on HTSC YBa2Cu3O7 – x in External Magnetic Fields
An unusual decrease in the slope of the upper critical field near Tc0 at a gradual increase in the ion implantation dose has been experimentally observed in narrow bridges formed on the base of thin HTSC YBa2Cu3O
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Article
Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix
A four-level model of photoluminescence from Si nanocrystal arrays embedded in a SiO2 matrix is suggested. The model allows for thermally activated transitions between singlet and triplet levels in the exchange-s...
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Article
Photoluminescence and EPR of porous silicon formed on n + and p + single crystals implanted with boron and phosphorus ions
The effect of combined do** by shallow donor and acceptor impurities on boosting the quantum yield of porous-silicon photoluminescence (PL) in the visible and near IR range was studied using phosphorus and b...
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Article
The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments
The effect of heat treatments at 1100°C on an ion-beam synthesis of Si nanocrystals in SiO2 layers is studied. The ion-implanted samples are subjected either to a single heat treatment after the total ion dose (1...
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Article
The effect of implantation of P ions on the photoluminescence of Si nanocrystals in SiO2 layers
The effects of implanting 1013–1016 cm−2 P ions and subsequent annealing at 600–1100°C on the photoluminescence of Si nanocrystals formed preliminarily in SiO2 layers were studied. Quenching of the 780-nm lumines...
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Article
Wave formation features for large collision angles of metal plates
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Article
Wave formation during high velocity collision of metals
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Article
Determination of the strength of copper upon dissociation of a cumulative jet
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Article
Driving of flying plates by the explosion products in a grazing detonation wave
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Article
Theory of waves on the interface of metals welded by explosion
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Article
Wave formation with the high-speed collision of metallic bodies
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Article
Determination of the parameters of shock compression with the explosion pressing of metallic powders
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Article
Measurement of the temperature in the zone of the seam with the explosive welding of metals
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Experimental determination of the dependence of the wavelength on the angle of collision in the process of the explosive welding of metals
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Article
Flight speed of a plate propelled by products from a sliding detonation
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Collapse of thin-walled tubes under explosive loading
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Investigation of the possibility of using a thermistor to measure the temperature of shock-compressed solids
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Study of the process of initiation of detonation of explosives by shock waves using the method of electrical conductivity