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Article
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
III–V/Ge/Si(001), III–V/Ge/SOI(001), and III–V/GaAs(001) heterostructures are fabricated and investigated. The Ge buffer layer for the III–V/Ge/Si structure is grown by vapor deposition onto a Si(001) substrat...
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Article
Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy
The effect of resistive switching in individual dislocations in memristor Ag/Ge/Si(001) structures is demonstrated experimentally using atomic force microscopy with a conducting probe. A hysteresis is found in...
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Article
Effect of the AlGaAs Seed Layer Composition on Antiphase Domains Formation in (Al)GaAs Structures Grown by Vapor-Phase Epitaxy on Ge/Si(100) Substrates
GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using AlxGa1 – xAs seed layers with different aluminum contents x in solid solution have been investigated. The in...
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Article
Resistive Switching in Memristors Based on Ge/Si(001) Epitaxial Layers
The Ag/Ge/Si(001) stacks with threading dislocations growing through the Ge epitaxial layers (ELs) manifested bipolar resistive switching (RS) between two metastable resistance states. Scanning transmission el...
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Article
Resistive Switching in Metal–Oxide–Semiconductor Structures with GeSi Nanoislands on a Silicon Substrate
It is shown that self-forming GeSi nanoislands built into the dielectric–semiconductor interface in the Si(001)-based metal–oxide–semiconductor (MOS) structures with the SiOx and ZrO2(Y) dielectric layers obtaine...
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Article
On the Influence of Pulsed Gamma-Neutron Irradiation on the Morphology of Self-Assembled GeSi/Si(001) Nanoislands
The influence of pulsed gamma-neutron irradiation on the surface morphology of GeSi/Si(001) heterostructures with surface self-assembled GeSi nanoislands grown by the combined sublimation molecular-beam epitax...
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Article
Resistive Switching in Memristors Based on Ag/Ge/Si Heterostructures
Ag/Ge/Si heterostructures with threading dislocations in Ge layer can exhibit resistive switching (RS) in two regimes: (i) bipolar and (ii) volatile unipolar. In both regimes, these structures possess stable s...
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Article
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al2O3(1 \(\bar {1}\) ...02) substrate is form...
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Article
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
The photoluminescence spectra of epitaxial n+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 ...
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Article
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
n+-Ge/p+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based i...
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Article
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers
A comparative study of the effect of pulsed γ-neutron irradiation on the photosensitivity spectra of Si p–n photodiodes with active layers based on self-assembled GeSi nanoisland arrays and Ge epitaxial layers is...
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Article
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
Ballistic hole emission microscopy/spectroscopy has been applied to study the electronic structure of the hole states in the self-assembled GeSi/Si(001) nanoislands. The ballistic hole emission microscopic ima...
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Article
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy
The spatial distribution of photocurrent in the plane of a Si-based p +–n junction with embedded self-assembled Ge x Si1–x ...
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Article
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emis...
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Article
Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
The conditions of the epitaxial growth of high-quality relaxed Si1–x Ge x layers by the combined method of the sublimation molecular-beam epitaxy...
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Article
A silicon sublimation source for molecular-beam epitaxy
A sublimation source for molecular-beam epitaxy of silicon layers with a rectangular wafer of doped Si is described. The wafer is attached to springing molybdenum clamps with a smaller width of the contact pad...
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Article
A random telegraph signal in tunneling silicon p–n junctions with GeSi nanoislands
We have experimentally discovered random telegraph signal generation in tunneling silicon p +–n + junctions with embedded self-assembled GeSi nanois...
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Article
Epitaxially Grown Monoisotopic Si, Ge, and Si1–x Ge x Alloy Layers: Production and Some Properties
The technology of the growth of Si, Ge, and Si1–x Ge x layers by molecular-beam epitaxy with the use of a sublimation source of monoisotopic 30Si...
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Article
A device for heating a substrate during molecular beam epitaxy
A device for uniform heating of both optically opaque silicon and transparent sapphire large-area substrates (with a diameter of up to 100 mm) in vacuum to high temperatures of 1250–1450°C is described. Using ...
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Article
A device for growing silicon films on standard wafers using a sublimation source
A device for depositing silicon films from a sublimation source on standard silicon wafers with diameters of 52−100 mm is described. The source is a silicon single crystal heated to a preset temperature of 130...
