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Article
On the temperature dependence of silicon quantum dot photoluminescence
A model of radiative and nonradiative transitions in silicon quantum dots is presented, which describes the photoluminescence temperature dependence of the ion-synthesized ensembles of Si nanocrystals in SiO2. A ...
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Article
Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix
A four-level model of photoluminescence from Si nanocrystal arrays embedded in a SiO2 matrix is suggested. The model allows for thermally activated transitions between singlet and triplet levels in the exchange-s...
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Article
On the existence of bistable stationary states of electron traps in surface oxide layers on metals
Thermostimulated electron emission from metals is described using a modified system of the Blokhintsev equations, which takes into account the diffusion of filled electron traps from the metal to the surface o...
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Article
Imaging traps in oxide semiconductors with the aid of thermostimulated electron emission
The patterns of thermostimulated electron emission from an iron-nickel alloy reveal fluctuations in the density of charged point defects in the surface oxide layer of the alloy sample.
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Article
Determining the parameters of electron traps in inhomogeneous layers by method of thermionic emission
Quasi-stationary nonlinear variation of the density of filled electron traps in the course of thermionic emission from the surface oxide layer on a metal cathode is theoretically described. Expressions for the...