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Article
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
III–V/Ge/Si(001), III–V/Ge/SOI(001), and III–V/GaAs(001) heterostructures are fabricated and investigated. The Ge buffer layer for the III–V/Ge/Si structure is grown by vapor deposition onto a Si(001) substrat...
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Article
System Interface of Scientific Services of a Digital Platform for Multiscale Modeling
The paper deals with the formation of system interfaces of a digital platform to manage the process of providing scientific services, including integration of scientific services to solve a complex research pr...
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Article
Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy
The effect of resistive switching in individual dislocations in memristor Ag/Ge/Si(001) structures is demonstrated experimentally using atomic force microscopy with a conducting probe. A hysteresis is found in...
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Article
Resistive Switching in Memristors Based on Ge/Si(001) Epitaxial Layers
The Ag/Ge/Si(001) stacks with threading dislocations growing through the Ge epitaxial layers (ELs) manifested bipolar resistive switching (RS) between two metastable resistance states. Scanning transmission el...
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Article
The Main Scientific and Technical Problems of Using Hybrid HPC Clusters in Materials Science
The article discusses the use of hybrid HPC clusters for the execution of software designed to calculate the electronic structure and atomic scale materials modeling. Modern software systems, which are designe...
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Article
Scientific Services Consolidation Methods
The article discusses methods of consolidating scientific services of a digital platform for integrating a set of scientific services for various fields of science for conducting interdisciplinary research. So...
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Article
Formation of an Individual Modeling Environment in a Hybrid High-Performance Computing System
In this paper, we consider the problem of solving scientific problems in the field of materials science in the environment of high-performance computing systems. Mathematical modeling methods implemented by sp...
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Article
Discrete Schrödinger Operator on a Tree, Angelesco Potentials, and Their Perturbations
We consider a class of discrete Schrödinger operators on an infinite homogeneous rooted tree. Potentials for these operators are given by the coefficients of recurrence relations satisfied on a multidimension...
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Article
Resistive Switching in Metal–Oxide–Semiconductor Structures with GeSi Nanoislands on a Silicon Substrate
It is shown that self-forming GeSi nanoislands built into the dielectric–semiconductor interface in the Si(001)-based metal–oxide–semiconductor (MOS) structures with the SiOx and ZrO2(Y) dielectric layers obtaine...
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Article
Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition
Ge/Si layers are formed on Si/SiO2/Si(100) substrates and are investigated for different growth temperatures. The Si layer is grown by molecular-beam epitaxy, while the Ge layer is produced by the hot wire chemic...
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Article
On the Influence of Pulsed Gamma-Neutron Irradiation on the Morphology of Self-Assembled GeSi/Si(001) Nanoislands
The influence of pulsed gamma-neutron irradiation on the surface morphology of GeSi/Si(001) heterostructures with surface self-assembled GeSi nanoislands grown by the combined sublimation molecular-beam epitax...
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Article
Resistive Switching in Memristors Based on Ag/Ge/Si Heterostructures
Ag/Ge/Si heterostructures with threading dislocations in Ge layer can exhibit resistive switching (RS) in two regimes: (i) bipolar and (ii) volatile unipolar. In both regimes, these structures possess stable s...
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Article
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al2O3(1 \(\bar {1}\) ...02) substrate is form...
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Article
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
The photoluminescence spectra of epitaxial n+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 ...
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Article
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
n+-Ge/p+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based i...
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Article
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
Ballistic hole emission microscopy/spectroscopy has been applied to study the electronic structure of the hole states in the self-assembled GeSi/Si(001) nanoislands. The ballistic hole emission microscopic ima...
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Article
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy
The spatial distribution of photocurrent in the plane of a Si-based p +–n junction with embedded self-assembled Ge x Si1–x ...
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Article
Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
The conditions of the epitaxial growth of high-quality relaxed Si1–x Ge x layers by the combined method of the sublimation molecular-beam epitaxy...
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Article
A silicon sublimation source for molecular-beam epitaxy
A sublimation source for molecular-beam epitaxy of silicon layers with a rectangular wafer of doped Si is described. The wafer is attached to springing molybdenum clamps with a smaller width of the contact pad...
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Article
A random telegraph signal in tunneling silicon p–n junctions with GeSi nanoislands
We have experimentally discovered random telegraph signal generation in tunneling silicon p +–n + junctions with embedded self-assembled GeSi nanois...
