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  1. No Access

    Article

    Formation of Hexagonal Phase 9R-Si in SiO \({}_{\mathbf{2}}\) /Si System upon Kr \({}^{\mathbf{+}}\) Ion Implantation

    Hexagonal silicon polytypes have attracted significant attention within the scientific community due to their potential applications in next-generation electronics and photonics. However, obtaining stable hete...

    A. A. Nikolskaya, D. S. Korolev, A. N. Mikhaylov… in Moscow University Physics Bulletin (2023)

  2. No Access

    Article

    Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs

    III–V/Ge/Si(001), III–V/Ge/SOI(001), and III–V/GaAs(001) heterostructures are fabricated and investigated. The Ge buffer layer for the III–V/Ge/Si structure is grown by vapor deposition onto a Si(001) substrat...

    A. A. Sushkov, D. A. Pavlov, A. I. Andrianov, V. G. Shengurov… in Semiconductors (2022)

  3. No Access

    Article

    Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition

    Ge/Si layers are formed on Si/SiO2/Si(100) substrates and are investigated for different growth temperatures. The Si layer is grown by molecular-beam epitaxy, while the Ge layer is produced by the hot wire chemic...

    A. A. Sushkov, D. A. Pavlov, S. A. Denisov, V. Yu. Chalkov, R. N. Kryukov… in Semiconductors (2020)

  4. No Access

    Article

    Electrophysical Characteristics of Multilayer Memristive Nanostructures Based on Yttria-Stabilized Zirconia and Tantalum Oxide

    The electrophysical characteristics of a multilayer memristive Au/Ta/ZrO2(Y)/TaOx/TiN structure have been studied. Electron and ion electret effects due to charge carrier trap** and ion migration polarization i...

    S. V. Tikhov, A. I. Belov, D. S. Korolev, I. N. Antonov, A. A. Sushkov… in Technical Physics (2020)

  5. No Access

    Article

    On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures

    The results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedur...

    S. M. Plankina, O. V. Vikhrova, B. N. Zvonkov, S. Yu. Zubkov… in Semiconductors (2019)

  6. No Access

    Article

    Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate

    A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al2O3(1 \(\bar {1}\) ...02) substrate is form...

    A. A. Sushkov, D. A. Pavlov, V. G. Shengurov, S. A. Denisov… in Semiconductors (2019)

  7. No Access

    Article

    Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

    The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of...

    N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev… in Semiconductors (2017)