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Chapter
An Introduction to Memory Chip Design
Several essential inventions and innovations, and subsequent sustained efforts [1.1] toward high densities have paved the way to large-scale integrated circuit (LSI) memories, as shown in Fig. 1.1 [1.2]. Since...
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Chapter
DRAM Circuits
The intensive research and development (R&D) directed toward DRAMs has rapidly increased memory-chip capacity by more than six orders (1 Kb to 4 Gb) at the R&D level over the past 30 years [3.1] since the adve...
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Chapter
On-Chip Voltage Generators
On-chip voltage generation [5.1–5.8] is becoming increasingly important for memory LSI design, as well as for other LSI designs. This importance is being accelerated by a recent trend toward lower-voltage oper...
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Chapter
Low-Power Memory Circuits
The low-power RAM circuit [7.1–7.4] is a major area of interest in low-power LSI research. Successive advances in the low-power RAM circuit have been able to suppress chip-power consumption, which increases wi...
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Chapter
The Basics of RAM Design and Technology
Advances in memory chip technology have been supported by extensive technologies, such as high-density, high-speed device and circuit technology, lithography and fabrication process technology, and high-densit...
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Chapter
High Signal-to-Noise Ratio DRAM Design and Technology
One of the main contributions to DRAM advances is the one-transistor, one-capacitor (1-T) cell, as explained in Chaps. 1 and 3. The cell has been universally used for over 25 years, because it has the highest ...
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Chapter
High-Performance Subsystem Memories
In the past, the high-speed SRAM cache and the DRAM main memory have contributed to enhancing the performance of hierarchical memory systems (Fig. 6.1) in personal computers (PCs), workstations, servers, and so o...
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Chapter
Ultra-Low-Voltage Memory Circuits
The reduction of the operating voltage is essential not only to reduce power dissipation, but also to ensure reliablity for miniaturized devices. Further reduction of the supply voltage allows users to design ...