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Article
Large-area oxidation of AlAs layers for dielectric stacks and thick buried oxides
The wet oxidation of AlAs and AlGaAs has been limited to relatively small lateral dimensions and relatively thin layers. Approaches are described to extend the oxide dimensions both horizontally and vertically...
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Article
X-Ray diffraction analysis of bandgap-engineered distributed bragg reflectors
Compositionally graded interfaces between constitutive layers of the distributed Bragg reflectors (DBRs) in vertical cavity surface emitting lasers (VCSELs) greatly reduce operating voltages. In this paper, we...
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Article
Investigation of electric fields, interface charges, and conduction band offsets at ZnSe/GaAs heterojunctions with a novel photoreflectance technique
ZnSe/GaAs heterojunctions were investigated by contactless electroreflectance and photoreflectance techniques. Negative surface charge densities on the order of 1012 cm-2 were observed for films grown on n-type G...
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Article
Gas Source Molecular Beam Epitaxy of ZnSe on (In,Ga)P
The wide bandgap semiconductor ZnSe has been nucleated on epitaxial (In,Ga)P buffer layers (on GaAs substrates) having various In compositions, and hence various lattice constants. The III-V ternary alloy offe...
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Article
N- and P-Type Do** of ZnSe Using Gas Source Molecular Beam Epitaxy
High quality ZnSe:Cl has been grown on GaAs by gas source molecular beam epitaxy (GSMBE); elemental Zn and H2Se are used as source materials, with ZnCl2 as a dopant source for donors. Atomic Cl concentrations ([C...
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Article
Gas source molecular beam epitaxy of ZnSe and ZnSe:N
The use of gas source molecular beam epitaxy, using hydrogen selenide and elemental Zn as source materials, has resulted in the growth of high quality ZnSe on closely lattice-matched GaAs and (In,Ga)P. The und...
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Article
Elimination of surface site blockage due to ethyl species in MOMBE of ZnSe
The metalorganic molecular beam epitaxial growth of ZnSe using diethylzinc and/or diethylselenium gas sources results in an abnormally low growth rate of several hundred angstroms per hour. Experiments with di...
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Article
Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors
Photo-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively de...
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Article
Laser-Assisted Growth of ZnSe by Metalorganic Molecular Beam Epitaxy
By employing metalorganic molecular beam epitaxy (MOMBE), the heteroepitaxy of ZnSe on GaAs has been achieved using diethylselenium and diethylzinc. Significant (10x ∼ 15x) growth rate enhancement has been obs...
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Article
Interface Properties of Heterovalent InSb Multilayer Structures
Multilayer InSb/CdTe and InSb/MnTe heterostructures are grown by molecular beam epitaxy. The analysis of multilayer structures by transmission electron microscopy (TEM) and x-ray rocking curves confirms the pr...
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Article
Metastable Zincblende MnTe and MnSe: MBE Growth and Characterization
Epilayers of metastable zincblende MnSe and MnTe have been grown by molecular beam epitaxy. The MnSe structures have been used to study magnetic ordering in thin layers by means of optical and magnetic measure...
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Article
Low Interface State Density at Pseudomorphic ZnSe/Epitaxial GaAs Interface
The electrical properties of pseudomorphic ZnSe/epilayer GaAs heterointerfaces, grown by MBE, have been investigated by capacitance versus voltage (C-V) and current versus voltage (I- V) measurements. Hole acc...
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Article
Photoluminescence of ZnSe Epilayers on GaAs Under Hydrostatic Pressure
The near bandgap photoluminescence of ZnSe epilayers grown on GaAs substrates is measured for pressures up to ~25 kbar using a diamond anvil cell at T = 9 K. The bandgap changes with pressure, dE/dp, for pseud...
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Article
Electron Microscope Study of Initial Stage of Growth of ZnSe on GaAs
Recent molecular beam epitaxy (MBE) studies have shown that depending on surface conditions of GaAs two different growth modes, layer-by-layer or island, occur at the initial stage of the growth of ZnSe on (10...
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Article
II-VI / III-V Heterostructures
The integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under w...
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Article
Transient Spectroscopy and Related Optical Studies in Diluted Magnetic Semiconductor Superlattices
Recent successes in molecular beam (MBE) epitaxial growth of diluted magnetic semiconductor (DMS) artificial microstructures are now generating structures in which optically excited lower dimensional electroni...
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Article
Anomalous Magneto-Optical and Magnetic Behavior in a Two-Dimensional Magnetic Semiconductor Superlattice MnSe/ZnSe
The growth by molecular beam epitaxy (MBE) of ultrathin layer II-VI compound semiconductors with magnetic constituents has opened new possibilities in the study of both lower dimensional electronic and magneti...
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Article
Submicron Heterostructures of Diluted Magnetic Semiconductors
The successful thin film growth of diluted magnetic semiconductors (DMS) by molecular beam epitaxy has “nucleated” a new field of research in which the DMS material is incorporated in a variety of novel superl...
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Article
Monte Carlo Simulation of the Growth of ZnSe by MBE
A Monte Carlo study of the growth of ZnSe by Molecular beam epitaxy is presented. The study is focused on the role of surface kinetic reactions on the structural quality of the epilayers. Two different models ...
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Article
Influence of Electric Fields on Exciton Luminescence in ZnSe/(Zn,Mn)Se Superlattices
Application of moderate external electric fields to ZnSe/(Zn,Mn)Se superlattices is shown to yield readily measurable spectral shifts of the exciton ground state resonance in the quantum well limit. This shows...