32 Result(s)
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Article
J. Vanhellemont
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Article
Ultra High Voltage Electron Microscopy Study of {113}-Defect Generation in Si Nanowires
Results are presented of a study of {113}-defect formation in Si nanowires with diameters ranging from 50 to 500 nm. The Si nanowires, used for the processing of tunnel-FET’s, are etched into a moderately dope...
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On the characterisation of grown-in defects in Czochralski-grown Si and Ge
High yield processing of advanced integrated devices poses stringent demands on substrate and active device layer quality. Wafers have to be free of electrically active defects and should therefore be free of ...
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Lifetime and leakage current considerations in metal-doped germanium
This paper discusses the impact of transition metal (TM) impurities in germanium on the electrical material and device characteristics, i.e., the recombination and generation lifetime and the leakage current i...
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Radiation damage in Si1−x Ge x heteroepitaxial devices
Results are presented of an extended study on the induced lattice defects and their effects on the degradation of Si1−x Ge x devices, subjected to a 20 MeV alpha-ray, 1 MeV elec...
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Article
Effect of irradiation in InGaAs photo devices
Results are presented of an extended study on the degradation of electrical and optical performance and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to a 20 MeV alpha-ray irradiation...
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Degradation and Recovery of Si1−xGex Devices by Irradiation
Results are presented of a study on the degradation and recovery behavior of strained Si 1−xGex diodes and heterojunction bipolar transistors (HBTs) by electron and neutron irradiation. The degradation of device ...
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Article
Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors
An overview is given of transmission electron microscopy techniques to address strain with nm scale spatial resolution. In particular the possibilities and limitations of (large angle) convergent beam electron...
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Low Temperature Anneal of the Divacancy in P-Type Silicon
Results are reported of a Deep Level Transient Spectroscopy (DLTS) study of the conversion of the divacancy, with energy level at Ev+0.19eV, to a level at Ev+0.24eV after anneal at temperatures below its disso...
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Hydrogenation of Multicrystalline Si-Materials for Solar Cells: Discrimination Between Effects in the Intra-Grain and Grain Boundary Regions
In this paper we describe the results of a study on the hydrogenation treatment of multicrystalline substrates by an RF-plasma with emphasis on discriminating between effects on the intra-grain material and gr...
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Article
Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors
An overview is given of transmission electron microscopy techniques to address strain with nm scale spatial resolution. In particular the possibilities and limitations of (large angle) convergent beam electron...
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Article
IR and MW Absorption Techniques for Bulk and Surface Recombination Control in High-Quaiity Silicon
The carrier recombination rate in high-quality FZ and Cz silicon substrates is studied by contactless infrared and microwave absorption techniques. Different surface treatments covering a wide range of surface re...
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Article
On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon
The recombination activity of oxygen precipitation related lattice defects in p- and n-type silicon is studied with photoluminescence (PL) and microwave absorption (MWA) techniques. A direct correlation is obs...
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Observation of Vacancy Clustering in Si Crystals During in Situ Electron Irradiation in a High Voltage Electron Microscope
The formation of vacancy clusters in various Si crystals covered with SiO2 and Si3N4 films has been studied by means of high-voltage and high-resolution electron microscopy using electron beam energies of 1000 an...
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Article
On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon
A semi-quantitave model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role...
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Article
Characterization of SIPOS films by spectroscopic ellipsometry and transmission electron microscopy
The structural and compositional properties of undoped SIPOS thin films have been studied by spectroscopic ellipsometry and transmission electron microscopy. It is shown that in most cases the former method pr...
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Article
Ion Beam Synthesis of Buried CoxNi1-xSi2 Layers in Silicon
Heteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Micr...
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Article
Formation of ultrathin CoSi2 films using a two-step limited reaction process
The formation of ultrathin (≤20 nm) and smooth CoSi2 layers on c–Si substrates has been studied by using a one- and a two-step RTP silicidation method. Pinhole-free silicide layers with a thickness down to ∼10–12...
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Article
Ion Beam Synthesis of Buried CoxNi1−xSi2 Layers in Silicon
Heteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Micr...
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Article
On the influence of interfaces and localised stress fields on irradiation-induced point-defect distributions in silicon
High-flux 1-MeV electron irradiation in a high voltage transmission electron microscope is used to study the influence of interfaces and localised stress fields on {113}-defect generation in silicon. A semi-qu...
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Article
Formation of Well-Separated Buried and Surface Nickel-Silicide Layers in a Single Ion Implantation Step
An unusual Ni distribution with two completely separated buried and surface suicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300° C, with a dose of 1.1 x 1017/cm2 and...
