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Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors

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Abstract

An overview is given of transmission electron microscopy techniques to address strain with nm scale spatial resolution. In particular the possibilities and limitations of (large angle) convergent beam electron diffraction ((LA)CBED) and electron diffraction contrast imaging (EDCI) techniques are discussed in detail. It will be shown by a few case studies that unique and quantitative information on local strain distributions can be obtained by the combined use of both (LA)CBED and EDCI in correlation with three dimensional finite element simulations of the strain distributions in the thinned specimen.

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Acknowledgments

K.G.F. Janssens is indebted to the Belgian IWT foundation for his fellowship. R. Hull (University of Virginia), J.C. Bean (AT&T Bell Labs), O. Van der Biest and H.E. Maes are acknowledged for the use of co-authored results.

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Authors and Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    J. Vanhellemont

  2. KULeuven, MTM, de Croylaan 2, B-3001, Leuven, Belgium

    K.G.F. Janssens

  3. Dipartimento di Fisica, Universitá di Modena, Via Campi 213/A, 1-41100, Modena, Italy

    S. Frabboni

  4. Department of Electrical Engineering, Stanford University, Stanford, CA, 94305-4055, USA

    P. Smeys

  5. CNR Istituto LAMEL, Via P. Gobetti 101, I-40129, Bologna, Italy

    R. Balboni & A. Armigliato

Authors
  1. J. Vanhellemont
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  2. K.G.F. Janssens
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  3. S. Frabboni
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  4. P. Smeys
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  5. R. Balboni
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  6. A. Armigliato
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Correspondence to J. Vanhellemont.

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Vanhellemont, J., Janssens, K., Frabboni, S. et al. Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors. MRS Online Proceedings Library 405, 435–446 (1995). https://doi.org/10.1557/PROC-405-435

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  • DOI: https://doi.org/10.1557/PROC-405-435

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