Abstract
The recombination activity of oxygen precipitation related lattice defects in p- and n-type silicon is studied with photoluminescence (PL) and microwave absorption (MWA) techniques. A direct correlation is observed between the amount of precipitated oxygen and the extended defect density on one hand and the minority carrier lifetime and PL activity on the other hand. The PL analyses show as dominant features in the spectra the Dl and D2 lines. The relative amplitude of the D-lines in the different samples is investigated as a function of the oxygen content, defect density and excitation level. The results are correlated with those of complementary techniques and are interrelated on the basis of Shockley-Read-Hall (SRH) theory.
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Vanhellemont, J., Kaniava, A., Libezny, M. et al. On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon. MRS Online Proceedings Library 378, 35–40 (1995). https://doi.org/10.1557/PROC-378-35
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DOI: https://doi.org/10.1557/PROC-378-35