Abstract
The temperature dependences of the contact resistance ρ c (T) of ohmic Pd-Ti-Pd-Au contacts to n-GaN and n-AlN wide-gap semiconductors with a high dislocation density are studied. The dependences ρ c (T) for both contacts contain portions of exponential decrease ρ c (T) and very weak dependence ρ c (T) at higher temperatures. Furthermore, a plateau portion ρ c (T) is observed in the low-temperature region for the Au-Pd-Ti-Pd-n-GaN contact. This portion appears only after rapid thermal annealing (RTA). In principle, the appearance of the plateau portion can be associated with preliminary heavy do** of the near-contact region with a shallow donor impurity and with do** during contact fabrication as a result of RTA, if the contact-forming layer contains a material that is a shallow donor in III–N. The dependences obtained are not explained by existing charge-transport mechanisms. Probable mechanisms explaining the experimental dependences ρ c (T) for ohmic contacts to n-GaN and n-AlN are proposed.
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Original Russian Text © A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Naumov, V.N. Panteleev, V.N. Sheremet, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 9, pp. 1191–1195.
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Sachenko, A.V., Belyaev, A.E., Boltovets, N.S. et al. Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density. Semiconductors 47, 1180–1184 (2013). https://doi.org/10.1134/S1063782613090212
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DOI: https://doi.org/10.1134/S1063782613090212