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Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers
The structure and luminescent properties of gallium nitride (GaN) epilayers grown by hydride-chloride vapor-phase epitaxy (HVPE) in a hydrogen or argon atmosphere on 2-inch Si(111) substrates with AlN buffer l...
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Article
Sulfide passivation of GaAs power diodes
The feasibility of reducing the leakage currents of GaAs power diodes by chemically treating their surfaces in solutions of (NH4)2S in isopropanol is investigated. It is established that after chemical surface tr...
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Article
Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures
The fabrication of photosensitive In(Au)/Si barrier-contact structures is described and the photoelectric behavior of these structures upon exposure to linearly polarized light incident obliquely on the barrie...
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Article
Photoelectric properties of GaN/GaP heterostructures
Thin interference layers of n-GaN were grown on n-and p-type GaP substrates with (100) and (111) orientations by vapor phase epitaxy in an open chloride system. Photosensitivity spectra of isotypic and anisotypic...
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Article
Photoelectric properties of ITO/p +-p −-InP solar cells in linearly polarized light
Indium phosphide heterostructures and transparent conducting films of wide-gap oxides have previously been used in the development of highly efficient solar cells, making it possible to bring their efficiencie...
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Article
Behavior of epitaxial GaAs layers as α particle detectors
The properties of epitaxial GaAs-based p +-n structures used as light-ion (α particle) were studied. A comparison is made with the latest published data on the possibilities of present-day semi-insulating GaAs (S...
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Article
Photoelectric properties of n-CdS/p-InP heterojunctions
The polarization method for studying photoactive absorption is used to investigate the photoconversion processes in CdS/InP heterojunctions as a function of the orientation of the indium phosphide substrate. T...
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Article
Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides
The photoelectric properties of ITO/n-Si solar cells with ITO-side oblique incidence of linearly polarized light on the solar cells have been studied. Polarization photosensitivity and an increase in the relative...
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Article
Photosensitivity of InP/CdS heterostructures in linearly polarized light
Measurements have been made of the photosensitivity of (p + -p −)-InP/n +-CdS structures formed by the growth of indium phosphide and cadmium sulfide films on p +-InP substrates...
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Article
Gallium Nitride Thick Layers: Epitaxial Growth and Separation from Substrates
We investigated the possibilities of vapour phase epitaxy in an open tube chloride system for thick GaN film deposition on sapphire substrates. The methodes of the buffer layer deposition were proposed and dev...