18 Result(s)
within
English
Materials Science
Characterization and Evaluation of Materials
Electronics and Microelectronics, Instrumentation
Young-Ho Kim
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Article
Analysis of 1/f noise in LWIR HgCdTe photodiodes
We study the 1/f noise currents and dark currents in LWIR HgCdTe photodiodes. The measured dark currents of the diodes processed by post implantation annealing with different annealing times are analyzed using...
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Article
Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion
Effects of fixed charge on R0A value of ZnS-passivated x=0.3 HgCdTe n-on-p diode are explained as a shunt resistance that affects current-voltage (I-V) and dynamic resistance-voltage (Rd-V) characteristics. The f...
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Article
Characteristics of gradually doped LWIR diodes by hydrogenation
The hydrogenation effects on HgCdTe diode performance are presented and the mechanism of hydrogenation is revealed. By the hydrogenation, R0A is increased by 30 times and photo-response is also improved. It is su...
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Article
Texture enhancement of Al films on Ti underlayers by radio-frequency bias sputtering
The influence of sputtering pressure and radio-frequency (RF) bias power on the texture of Al/Ti thin films has been investigated. The Al/Ti thin films were deposited sequentially onto thermally oxidized Si wa...
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Article
Interfacial microstructure and intermetallics developed in the interface between in solders and Au/Ni/Ti thin films during reflow process
Intermetallic phases and microstructures formed between In solder and Au/Ni/Ti thin films during reflow were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission el...
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Article
Microstructure characterization of Sn-Ag solder joints between stud bumps and metal pads
The microstructure of the flip-chip solder joints fabricated using stud bumps and Pb-free solder was characterized. The Au or Cu stud bumps formed on Al pads on Si die were aligned to corresponding metal pads ...
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Article
The microstructure characterization of ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallization
The microstructure of the ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallizations (UBMs) was investigated as a function of cooling rate. The ultrasmall eutectic Bi-Sn solder b...
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Article
Contact resistance and shear strength of the solder joints formed using Cu bumps capped with Sn or Ag/Sn layer
Solder joints were successfully bonded by joining Ag/Sn/Cu bumps and Ag/Sn/Cu layers at 200°C for 30 sec under 20 MPa, 40 MPa, and 80 MPa using thermo-compression bonder. The solder joints were aged at 150°C u...
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Article
A comparison of gamma radiation effects on bromine- and hydrazine-treated HgCdTe photodiodes
In this study, we investigated the effects of gamma radiation on ZnS/CdTe-passivated HgCdTe photodiodes that were fabricated with one of two different surface treatments using bromine, Br2, or hydrazine, N2H4. Un...
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Article
Characteristics of the Interfacial Microstructure of Chip-on-Plastic Joints under Thermal Cycling and Aging Treatment
This study presents the change of contact resistance and microstructure evolution of chip-on-plastic (COP) joints during the thermal cycling (T/C) test and aging treatment. Results showed that the average cont...
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Article
Nucleation and Growth of Zinc Particles on an Aluminum Substrate in a Zincate Process
The nucleation and growth of zinc particles during a conventional zincate process were investigated. Zinc particles preferentially nucleated on the peak or edge of an aluminum surface and preferentially grew w...
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Article
Kinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates
The growth kinetics of an intermetallic compound (IMC) layer formed between Sn-3.5Ag-0.5Cu (SAC) solders and Cu-Zn alloy substrates was investigated for samples aged at different temperatures. Scallop-shaped Cu6S...
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Article
Effect of Pd Thickness on the Interfacial Reaction and Shear Strength in Solder Joints Between Sn-3.0Ag-0.5Cu Solder and Electroless Nickel/Electroless Palladium/Immersion Gold (ENEPIG) Surface Finish
Intermetallic compound formation at the interface between Sn-3.0Ag-0.5Cu (SAC) solders and electroless nickel/electroless palladium/immersion gold (ENEPIG) surface finish and the mechanical strength of the sol...
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Article
Chip to Chip Bonding Using Cu Bumps Capped with Thin Sn Layers and the Effect of Microstructure on the Shear Strength of Joints
Chip to chip bonding techniques using Cu bumps capped with thin solder layers have been frequently applied to 3D chip stacking technology. We studied the effect of joint microstructure on shear strength. Joint...
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Article
Effects of Solder Volume and Reflow Conditions on Self-Alignment Accuracy for Fan-Out Package Applications
The effects of solder volume and reaction time between molten solder and a metal pad at the peak temperature of reflow on the self-alignment effect have been investigated in flip chip bonding. A glass die with...
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Article
Effect of Ni-P Plating Temperature on Growth of Interfacial Intermetallic Compound in Electroless Nickel Immersion Gold/Sn-Ag-Cu Solder Joints
The growth of interfacial intermetallic compound and the brittle fracture behavior of Sn-3.0Ag-0.5-Cu solder (SAC305) joints on electroless nickel immersion gold (ENIG) surface finish have been investigated us...
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Article
Electrical Characteristics of a Ga-free T2SL Mid-wave Infrared nBn Detector Based on an InAs/AlAsSb/InAsSb Barrier
Ga-free InAs/InAsSb type-II superlattice (T2SL) has been used as an absorption layer of a high-operating-temperature mid-wavelength infrared nBn detector because it has a long Shockley–Read–Hall limited minori...
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Article
Plasma Treatment for Surface Stabilization in InAs/GaSb Type-II Superlattice LWIR and VLWIR Photodetectors
An InAs/GaSb nBn structure was investigated as a replacement for mercury cadmium telluride (MCT) in long-wavelength infrared (LWIR) and very long-wavelength infrared (VLWIR) detectors, which is advantageous fo...
