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  1. No Access

    Article

    Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

    InSb1−xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen wa...

    T. Ishiguro, Y. Kobori, Y. Nagawa, Y. Iwamura… in MRS Online Proceedings Library (2003)

  2. No Access

    Article

    Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device

    We have studied thermoelectric properties of III-nitrides of Al1-xInxN and III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency sputtering with the aim of fabricating a thermoelectric power devi...

    S. Yamaguchi, Y. Iwamura, A. Yamamoto in MRS Online Proceedings Library (2011)