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Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

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Abstract

InSb1−xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1−xNx up to 0.24.

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Acknowledgments

This work was partly supported by the Murata Science Foundation.

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Authors and Affiliations

  1. Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3-27-1 Rokkakubashi, Kanagawa-ku, Yokohama, 221-8686, Japan

    T. Ishiguro, Y. Kobori, Y. Nagawa, Y. Iwamura & S. Yamaguchi

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  1. T. Ishiguro
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  2. Y. Kobori
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  3. Y. Nagawa
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  4. Y. Iwamura
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  5. S. Yamaguchi
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Ishiguro, T., Kobori, Y., Nagawa, Y. et al. Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy. MRS Online Proceedings Library 799, 174–178 (2003). https://doi.org/10.1557/PROC-799-Z5.16

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  • DOI: https://doi.org/10.1557/PROC-799-Z5.16

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