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Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device

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Abstract

We have studied thermoelectric properties of III-nitrides of Al1-xInxN and III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency sputtering with the aim of fabricating a thermoelectric power device based on III-nitride semiconductors. For Al0.55In0.45N, the maximum value of power factor was 3.63×10−4 W/mK2 at 873K. For Al0.02In0.98O1.14N0.49 and Al0.14In0.86O1.30N0.67, the maximum power factor was 2.82×10−4 W/mK2 and 4.73×10−4 W/mK2 at 873 K, respectively. For InO0.82N0.86, it was 3.75×10−4 W/mK2 at 973 K.

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Authors and Affiliations

  1. Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, 221-8686, Kanagawa-ku, Yokohama, Japan

    S. Yamaguchi & Y. Iwamura

  2. Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1-1-1, 305-8568, Tsukuba, Japan

    S. Yamaguchi, Y. Iwamura & A. Yamamoto

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  1. S. Yamaguchi
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  2. Y. Iwamura
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  3. A. Yamamoto
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Yamaguchi, S., Iwamura, Y. & Yamamoto, A. Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device. MRS Online Proceedings Library 743, 611 (2002). https://doi.org/10.1557/PROC-743-L6.11

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  • DOI: https://doi.org/10.1557/PROC-743-L6.11

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