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    Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

    InSb1−xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen wa...

    T. Ishiguro, Y. Kobori, Y. Nagawa, Y. Iwamura… in MRS Online Proceedings Library (2003)