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Article
Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy
InSb1−xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen wa...
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Article
Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device
We have studied thermoelectric properties of III-nitrides of Al1-xInxN and III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency sputtering with the aim of fabricating a thermoelectric power devi...