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  1. No Access

    Article

    Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device

    We have studied thermoelectric properties of III-nitrides of Al1-xInxN and III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency sputtering with the aim of fabricating a thermoelectric power devi...

    S. Yamaguchi, Y. Iwamura, A. Yamamoto in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

    InSb1−xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen wa...

    T. Ishiguro, Y. Kobori, Y. Nagawa, Y. Iwamura… in MRS Online Proceedings Library (2003)