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  1. No Access

    Article

    Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics

    The ultrathin body of two-dimensional (2D) materials provides potential for next-generation electronics and optoelectronics. The unavoidable atomic defects substantially determine the physical properties of at...

    Jie Jiang, Peng Yang, Juin J. Liou, Wugang Liao, Yang Chai in Nano Research (2023)

  2. Article

    Open Access

    Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

  3. The growth of high-quality single-crystalline Te nanobelts is reported by introducing atomically flat hexagonal boron nitride (h-BN) nanoflakes into the ch...

    4. Peng Yang, Jiajia Zha, Guoyun Gao, Long Zheng, Haoxin Huang… in Nano-Micro Letters (2022)

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  4. Article

    Open Access

    Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection

    Bulk photovoltaic effect (BPVE), featuring polarization-dependent uniform photoresponse at zero external bias, holds potential for exceeding the Shockley-Queisser limit in the efficiency of existing opto-elect...

    **gxuan Wei, Ying Li, Lin Wang, Wugang Liao, Bowei Dong, Cheng Xu… in Nature Communications (2020)

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  5. No Access

    Article

    Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film

    Silicon-rich silicon nitride (SRSN) films were prepared by plasma-enhanced chemical vapor deposition. Silicon quantum dots (Si QDs) were obtained after high temperature annealing. Fourier transform infrared sp...

    Wugang Liao, **angbin Zeng, **xing Wen, Wenjun Zheng… in Journal of Electronic Materials (2015)

  6. No Access

    Article

    Synthesis and Optical Properties of Si-Rich Nitride Containing Silicon Quantum Dots

    Hydrogenated silicon-rich nitride films were deposited by plasma-enhanced chemical vapor deposition using NH3 and SiH4. As-deposited samples were thermally annealed under different conditions in argon ambient. Fo...

    Wugang Liao, **angbin Zeng, **xing Wen, Wenjun Zheng… in Journal of Electronic Materials (2013)