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Article
InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers
To improve the internal quantum efficiency (IQE) and light output power of InGaN light-emitting diodes (LEDs), we proposed an In-composition gradient increase and decrease InGaN quantum barrier structure. Thro...
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Article
Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers
The performance of AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) was investigated by varying the thickness of the upper and lower waveguide (WG) layers. The results show that (1) the asymmetric wide WG...
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Article
Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics
The ultrathin body of two-dimensional (2D) materials provides potential for next-generation electronics and optoelectronics. The unavoidable atomic defects substantially determine the physical properties of at...
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Article
AlGaN-Based Deep-Ultraviolet Laser Diodes with Novel Superlattice Electron-Blocking Layers
Based on the specificity of AlGaN-based deep-ultraviolet laser diodes (DUV-LDs), we design a laser with a novel superlattice (SL) electron-blocking layer (EBL) structure using Crosslight’s LASTIP, and its perf...
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Article
Improvement of the optoelectronic characteristics in deep-ultraviolet laser diodes with tapered p-cladding layer and triangular electron blocking layer
The interface polarization effect of the electron blocking layer (EBL) hinders the hole transmission efficiency, and the traditional EBL cannot effectively suppress the electron leakage and reduce the hole ene...
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Article
Performance improvement of nitride semiconductor-based deep-ultraviolet laser diodes with superlattice cladding layers
A deep-ultraviolet (DUV) laser diode (LD) consisting of specifically designed cladding layers involving superlattice nitride alloy has been proposed. Simulation studies of different cladding layers were carrie...
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Article
Improving the Performance of AlGaN-Based Deep Ultraviolet Laser Diodes Using a Convex Waveguide Layer
There exists an extensive research interest in the performance improvement of AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs). Herein, to reduce the carrier leakage problem of LDs, we propose a convex wa...
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Article
Open AccessGrowth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
The growth of high-quality single-crystalline Te nanobelts is reported by introducing atomically flat hexagonal boron nitride (h-BN) nanoflakes into the ch...
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Book
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Chapter
On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process
Standard CMOS technologies have been increasingly used in RF IC applications mainly due to low manufacture cost and improvement in performance. Achieving sufficient ESD protection for RF and high-speed mixed s...
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Chapter
Basics in ESD Protection of Radio Frequency Integrated Circuits
Electrostatic discharge (ESD) has been a critical design concern to integrated circuits (ICs) for many years. ESD has posed a major product reliability threat as it is present in all IC manufacturing processes...
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Chapter
Design of SiGe SCR Devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process
Silicon controlled rectifiers (SCRs) are increasingly used in the industry for electrostatic discharge (ESD) protection applications because of their high current handling capability and low parasitic capacita...
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Chapter
Conclusion
Advancement in radio frequency (RF) integrated circuits (ICs) is one of the driving forces behind the wide spread use of modern wireless communication and other high-speed applications. The reliable daily usag...
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Chapter
On-Chip Radio Frequency ESD Protection Solution in GaAs pHEMT Process
Electrostatic discharge (ESD)-induced failure is a major concern for the pseudomorphic high electron mobility transistor (pHEMT)-based integrated circuits. This reliability issue is further worsened by the inh...
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Chapter
Characterization of Nanowire Devices Under Electrostatic Discharge Stress Conditions
Discussed in this chapter is the electrostatic discharge (ESD) as the pervasive threat from fabrication, packaging to assembly operation of IC. The ESD robustness of the gate-all-around Silicon nanowire FETs a...
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Article
Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films
Different ferroelectric thin films and their related Metal-Semiconductor-Insulator-Metal (MSIM) structures include zinc oxide (ZnO) are studied, which can be utilized in back-gated ferroelectric field-effect t...
