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Article
A new type of polarimetric photodetectors for analyzing of laser radiation in optical communication lines
A photovoltaic effect has been discovered at a contact between a semiconductor and biological origin materials. Photoelectrical properties of the new type structures have been investigated. Structures consisti...
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Article
p-GaSb(Ox)/n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties
A new non-vacuum technology is proposed and anisotype photosensitive heterojunctions (native oxide of a narrow-gap III–V semiconductor)-(binary compound) p-GaSb(Ox)/n-GaSb are fabricated for the first time. The d...
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Article
Creation and photoelectric properties of Ox/p-InAs heterostructures
For the first time, heterostructures represented by the contact of a thin film of indium-arsenide intrinsic oxide Ox with an InAs wafer are obtained by the surface thermal interaction of indium arsenide with t...
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Article
Creation and studies of the photosensitivity of Ox/n-GaP structures
Photosensitive heterostructures Ox/n-GaP, where Ox is a native oxide, are created for the first time by thermal interaction of a GaP crystal with ambient air. The photovoltaic effect of the heterostructures, whic...
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Article
Photosensitive Ox/GaAs heterojunctions: Creation and properties
A method for the thermal oxidation of GaAs crystals in air is suggested and the first photosensitive Ox/n-GaAs heterojunctions, where Ox is a native oxide, are fabricated. The steady current-voltage characteristi...
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Article
Photosensitivity of ZnO/CdS/Cu(In,Ga)Se2/Mo thin-film solar cells fabricated on various substrates
The results of measuring the first spectra of relative quantum efficiency for photoconversion in thin-film ZnO/CdS/Cu(In,Ga)Se2/Mo solar cells fabricated on rigid (glass) and flexible (polyimide) substrates are r...
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Article
Kinetic phenomena in zero-gap semiconductors CuFeS2 and CuFeTe2: Effect of pressure and heat treatment
Electrical resistivity ρ and Hal coefficient R are measured as a function of the temperature (T = 1.7−310 K) and the magnetic field (up to H = 28 kOe) in zero-gap semiconductor CuFeS2 samples subjected to hydrost...
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Article
Photosensitive thin-film In/p-Pb x Sn1 − x S Schottky barriers: Fabrication and properties
Thin Pb x Sn1 − x S films are obtained by the “hot-wall” method at substrate temperatures of 210–330°C. The microstructure, composition, morphology, and e...
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Article
Quaternary (FeIn2S4) x (MnIn2S4)1 − x alloys and photosensitive structures on their basis
Using directional crystallization of the melt of the (FeIn2S4) x (MnIn2S4)1 − x alloy, homogeneous crystals of a similar atomic composition are grown ove...
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Article
Photosensitive structures based on CuIn5Te8 single crystals: Development and properties
A new ternary compound is synthesized for the first time, and bulk CuIn5Te8 single crystals are grown by directed crystallization of near-stoichiometric melt. It is established from X-ray diffraction patterns of ...
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Article
Surface-barrier structures on single crystals of CdMgMnTe quaternary solid solutions: Creation and properties
Planar melt crystallization is used to grow single crystals of Cd-Mg-Mn-Te quaternary alloys along the pseudobinary sections Cd0.75 − x Mg x Mn0.25Te, Cd0...
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Article
Magnetic and thermal properties of CuFeS2 at low temperatures
The magnetic moment M, the magnetic susceptibility χ, and the thermal conductivity of chalcopyrite CuFeS2, which is a zero-gap semiconductor with antiferromagnetic ordering, have been measured in the temperature ...
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Article
Development and photoelectric properties of In/p-Ag3AsS3 surface-barrier structures
Homogeneous p-Ag3AsS3 bulk single crystals with rhombic structure have been grown by planar crystallization from melts with atomic composition corresponding to this ternary compound. Photosensitive surface-barrie...
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Article
Growth of tetragonal CdP2 single crystals and the properties of barriers on their basis
Large (50 mm long, 20 mm in diameter) CdP2 single crystals with tetragonal symmetry are grown by vapor-phase crystallization for the first time. The unit cell parameters of the single crystals are determined, and...
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Article
Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties
An athermal nonvacuum technology was suggested and implemented, and nonclassically polyconjugated polydisalicylidene azomethyne/Si(GaAs) heterojunctions were fabricated for the first time. It was found that th...
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Article
Photoelectric properties of In/CdP2 surface barrier structures
We used vapor-phase crystallization to grow homogeneous single crystals of the compound CdP2 of diameter 20 mm and length up to 50 mm. We determined the unit cell parameters and the composition of the single crys...
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Article
Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS
A new technology of chemical surface deposition is developed, and thin CdS films (35–100 nm) on the p-CdTe substrates are obtained. Electrical and photoelectric properties of n-CdS/p-CdTe heterojunctions are stud...
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Article
Discovery of the (In2S3) x (MnIn2S4)1 − x solid solutions and fabrication of photosensitive structures based on them
A technology of growing single crystals of (In2S3) x (MnIn2S4)1 − x solid solutions that provides control over their atomic composition in the entire con...
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Article
Growth of the (In2S3) x (FeIn2S4)1 − x single crystals and properties of photoelectric structures on their basis
Complete mutual solubility in the (In2S3) x (FeIn2S4)1 − x system is established. The technology is developed, and single crystals of the continuous seri...
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Article
Photosensitive structures on single crystals of MnIn2S4: Preparation and properties
Uniform single crystals of a ternary compound MnIn2S4 have been grown by the method of directional crystallization of an almost stoichiometric melt. The problem of the creation of photosensitive structures has be...
