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  1. No Access

    Article

    Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures

    TlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K...

    V. Kažukauskas, R. Garbačauskas, S. Savicki in Semiconductors (2018)

  2. No Access

    Article

    Influence of defects formed by fast reactor neutrons on exciton luminescence spectra of cadmium sulfide single crystals

    The influence of clusters of defects formed by irradiation with neutrons in CdS single crystals on parameters of the spectra of exciton photoluminescence at T ∼ 4.2 K has been studied. It is experimentally establ...

    G. E. Davidyuk, N. S. Bogdanyuk, V. V. Bozhko, A. H. Kevshyn… in Semiconductors (2010)

  3. No Access

    Article

    Features of subthreshold defect formation in CdS and CdS:Cu single crystals subjected to irradiation with X-ray photons

    Experimental results of the study of the effect of irradiation with 230-keV electrons and with X-ray photons with energies of 8.06 and 17.5 keV and the effect of quenching on the formation and reconstruction o...

    G. L. Mironchuk, H. Ye. Davidyuk, V. V. Bozhko, V. Kažukauskas in Semiconductors (2010)

  4. No Access

    Article

    The effect of irradiation with high-energy protons on 4H-SiC detectors

    The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 1016 cm−2) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation re...

    V. Kažukauskas, R. Jasiulionis, V. Kalendra, J. -V. Vaitkus in Semiconductors (2007)

  5. No Access

    Article

    Formation of ohmic contacts on semi-insulating GaAs by laser deposition of In

    A method for producing ohmic contacts on semi-insulating GaAs by laser ablation with subsequent laser deposition of In is proposed. The contacts are formed at room temperature; thus, the high-temperature annea...

    V. Kazlauskienė, V. Kažukauskas, J. Miškinis, A. Petravičius, R. Pūras… in Semiconductors (2004)

  6. No Access

    Article

    Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation

    We report the investigation of the non-irradiated and irradiated-with-pions Schottky diodes made on semi-insulating GaAs. Thermally stimulated currents have been measured experimentally and modeled numerically...

    G. Kavaliauskienė, V. Kažukauskas, V. Rinkevičius, J. Storasta… in Applied Physics A (1999)

  7. No Access

    Article

    Photo-magneto-electric effect in semi-insulating GaAs: carrier lifetimes and influence of the defect structure

    We report the investigation of the Photo-Magneto-Electric effect (PME) in semi-insulating Liquid-Encapsulated (LEC-) grown GaAs crystals, using both intrinsic and impurity excitation. The role of the majority ...

    V. Kažukauskas in Applied Physics A (1995)

  8. No Access

    Article

    Investigation of transient transport and recombination phenomena in semiinsulating GaAs

    Photoconductivity and Hall voltage kinetics were measured simultaneously in SI GaAs monocrystals, using the pulsed neodimium laser excitation. The scattering and recombination centres were found to have a diff...

    V. Kažukauskas, J. Vaitkus in Zeitschrift für Physik B Condensed Matter (1994)

  9. No Access

    Article

    Dynamics of optical and electrooptical switching in photo-thermal bistable CdS crystals

    We investigate the dynamical properties of photo-thermal Self Electrooptic Effect Devices (SEEDs) fabricated of thin single crystal platelets in a wide region of excitation intensities at room temperature. Det...

    V. Kažukauskas, J. Grohs, C. Klingshirn… in Zeitschrift für Physik B Condensed Matter (1990)