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    Formation of ohmic contacts on semi-insulating GaAs by laser deposition of In

    A method for producing ohmic contacts on semi-insulating GaAs by laser ablation with subsequent laser deposition of In is proposed. The contacts are formed at room temperature; thus, the high-temperature annea...

    V. Kazlauskienė, V. Kažukauskas, J. Miškinis, A. Petravičius, R. Pūras… in Semiconductors (2004)