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Obtaining of Nanoscale Layers of Solid Solutions in GaSb, GaAs, InAs Wafers Because of Solid-Phase Substitution Reactions

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

Samples of heterostructures made on the basis of semiconductor wafers of binary compounds GaAs, GaSb and InAs as a result of substitution of Group V elements of atoms by atoms of other Group V elements supplied in the form of vapors, including simultaneous Zn diffusion are studied. The possibility of using the obtained structures to make a photoelectric converter is demonstrated.

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Funding

SIMS measurements were performed using the equipment of the Center of Multi-User Equipment “Material Science and Diagnostics for Advanced Technologies”, supported by the RF Ministry of Science and Higher Education of the Russian Federation.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. I. Vasil’ev, G. S. Gagis, B. Ya. Ber, D. Yu. Kazantsev, M. V. Tokarev, V. I. Kuchinskii, M. V. Nakhimovich & V. P. Khvostikov

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  1. V. I. Vasil’ev
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  2. G. S. Gagis
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  3. B. Ya. Ber
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  4. D. Yu. Kazantsev
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  5. M. V. Tokarev
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  6. V. I. Kuchinskii
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  7. M. V. Nakhimovich
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  8. V. P. Khvostikov
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Corresponding author

Correspondence to G. S. Gagis.

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The authors declare that they have no conflicts of interest.

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Vasil’ev, V.I., Gagis, G.S., Ber, B.Y. et al. Obtaining of Nanoscale Layers of Solid Solutions in GaSb, GaAs, InAs Wafers Because of Solid-Phase Substitution Reactions. Bull. Russ. Acad. Sci. Phys. 87, 849–852 (2023). https://doi.org/10.3103/S1062873823702106

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  • DOI: https://doi.org/10.3103/S1062873823702106

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