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  1. No Access

    Article

    Formation of the low-resistivity compound Cu3Ge by low-temperature treatment in an atomic hydrogen flux

    The systematic features of the formation of the low-resistivity compound Cu3Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposi...

    E. V. Erofeev, A. I. Kazimirov, I. V. Fedin, V. A. Kagadei in Semiconductors (2016)

  2. No Access

    Article

    Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic

    A modified semiconductor epitaxial heterostructure of a low-barrier diode, which would make it possible to substantially reduce the reverse-current density of the diode without deterioration of its other key p...

    I. V. Yunusov, V. A. Kagadei, A. Y. Fazleeva, V. S. Arykov in Semiconductors (2016)

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    Article

    A nonlinear microwave model of a low-barrier diode based on semiconductor junctions

    A refined nonlinear model of a low-barrier diode based on semiconductor junctions, which is constructed in a modified equivalent electric circuit, is proposed. The model takes into account the design features ...

    I. V. Yunusov, V. A. Kagadei, A. Yu. Fazleeva, V. S. Arykov in Russian Microelectronics (2016)

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    Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate

    The features of the formation of Ta/Ti/Al/Mo/Au ohmic contacts to a Al0.26Ga0.74N/AlN/GaN heterostructure grown on semi-insulating Si(111) substrates are studied. The dependences of the contact resistance on the ...

    K. Yu. Osipov, L. E. Velikovskiy, V. A. Kagadei in Semiconductors (2014)

  5. No Access

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    Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact to n-i-GaAs

    The influence of the modes and conditions of deposition of the Ti film of the diffusion barrier on the parameters of the Ge/Au/Ni/Ti/Au ohmic contacts to n-i-GaAs were investigated. Deposition modes of the Ti fil...

    E. V. Erofeev, V. A. Kagadei in Russian Microelectronics (2012)

  6. No Access

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    Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate

    In the present study, a technology for the formation of a submicron GaAs MESFET gate of 0.5–0.1 μm in length and above 0.5 μm in height using a four-layer dielectric dummy gate was developed. Techniques of che...

    V. S. Arykov, A. M. Gavrilova, O. A. Dedkova, V. A. Kagadei… in Russian Microelectronics (2012)

  7. No Access

    Article

    Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface

    Comparative analysis of the influence of thermal annealing on Ge/Au/Ni-, Ge/Au/Ti/Au-, and Ge/Au/Ni/Ti/Au-based ohmic contacts and Ti/Au-based Schottky contacts deposited on an n-GaAs (100) surface treated and no...

    E. V. Erofeev, V. A. Kagadei in Semiconductors (2011)

  8. No Access

    Article

    Study of the influence of the sulfide and ultraviolet treatment of the n-i-GaAs surface on the parameters of ohmic contacts

    The possibility of improving the parameters of AuGe/Ni- and Ge/Cu-based ohmic contacts to n-i-GaAs by modifying the preliminarily oxidized GaAs surface in a sulfide-containing solution, as well as via the effect ...

    S. M. Avdeev, E. V. Erofeev, V. A. Kagadei in Semiconductors (2011)

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    Numerical simulation of hydrogenation of GaAs at the cooling stage

    Evolution of concentration profiles of all types of hydrogen particles, charge carriers, active do** impurity, and distribution of the electric field in the near-surface layer of hydrogenated p-GaAs during cool...

    V. A. Kagadei, E. V. Nefyodtsev in Semiconductors (2010)

  10. No Access

    Article

    Numerical simulation of the process of hydrogenation of GaAs

    The evolution of concentration profiles for all types of hydrogen particles, charge carriers, and active dopants in the surface region of p-GaAs during hydrogenation is simulated. The numerical experiment is cond...

    V. A. Kagadei, E. V. Nefyodtsev in Semiconductors (2009)

  11. No Access

    Article

    A thin-film resistive sensor for measuring atomic hydrogen flux density

    An eight-channel thin-film resistive atomic hydrogen (AH) sensor is described. It is intended to measure the AH flux density in an atomic-molecular mixture at a reduced gas pressure (10−2–10−4 Pa), particularly u...

    V. A. Kagadei, E. V. Nefedtsev… in Instruments and Experimental Techniques (2008)

  12. No Access

    Article

    Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons

    The effect of intense atomic hydrogen flux on the defect density in the surface layer of single-crystal silicon is studied. It is shown that the formation of local molten regions by pulsed-light heating of Si ...

    M. V. Zakharov, V. A. Kagadei, T. N. L’vova, E. V. Nefedtsev… in Semiconductors (2006)

  13. No Access

    Article

    Removal of fluoropolimers from the surface of silicon structures by treatment in an atomic hydrogen flow

    The possibility of successful removal of fluoropolimers from the surface of silicon structures by treatment in an atomic hydrogen flow is investigated. It is ascertained that the treatment of samples in a dire...

    E. V. Anishchenko, V. A. Kagadei, E. V. Nefedtsev, D. I. Proskurovskii… in Semiconductors (2005)

  14. No Access

    Article

    Residual-Photoresist Removal from Si and GaAs Surfaces by Atomic-Hydrogen Flow Treatment

    It is shown by experiment that a directed atomic-hydrogen stream offers a means of residual-photoresist removal from Si and GaAs surfaces. The dependence of postprocess surface roughness on process time and te...

    E. V. Anishchenko, V. A. Kagadei, E. V. Nefedtsev… in Russian Microelectronics (2005)

  15. No Access

    Article

    Influence of the Self-Heated Cathode Geometry on the Parameters of a Low-Pressure Discharge in Crossed E×H Fields

    The parameters of a self-maintained low-pressure discharge in crossed E×H fields are compared for the Penning discharge with a self-heated disk cathode and the combined discharge with an axial self-heated rod ...

    L. A. Zyul’kova, A. V. Kozyrev, V. A. Kagadei… in Russian Physics Journal (2005)

  16. No Access

    Article

    Kinetics of Hydrogenation and Variations in Resistance of Vanadium Thin Films Treated in Atomic Hydrogen Flow

    Methods of nuclear reactions, x-ray diffraction analysis, transmission electron and nuclear microscopy were used to investigate the mechanism of hydrogenation of thin vanadium films in their treatment in a flo...

    V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky… in Russian Physics Journal (2003)

  17. No Access

    Article

    Atomic hydrogen flux density measured using thin metal films

    Using one-or two-layer films of transition metals, it is possible to determine the atomic hydrogen flux density under reduced gas pressure conditions (10−1–10−3 Pa). The method consists in monitoring a change in ...

    V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky… in Technical Physics Letters (2003)

  18. No Access

    Article

    The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures

    It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such s...

    V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky… in Technical Physics Letters (2003)

  19. No Access

    Article

    Current-voltage characteristics of a reflex discharge with a hollow cathode and self-heating electrode

    Results are presented from experimental studies of the current-voltage characteristics of a reflex discharge with a self-heating electrode used in a source of atomic hydrogen. The processes occurring in a disc...

    V. A. Kagadei, A. V. Kozyrev, I. V. Osipov, D. I. Proskurovskii in Technical Physics (2001)

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    Article

    A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures

    It was established that the laws of atomic hydrogen penetration from an arc reflection discharge gap with a hollow cathode and self-heating element into GaAs samples coated with a thin SiO2 film differ significan...

    V. G. Bozhkov, V. A. Kagadei, D. I. Proskurovskii… in Technical Physics Letters (2000)

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