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Article
Generation of Low-Energy High-Current Electron Beams in Plasma-Anode Electron Guns
This paper is a review of studies on the generation of low-energy high-current electron beams in electron guns with a plasma anode and an explosive-emission cathode. The problems related to the initiation of e...
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Article
A mechanism of microcrater formation in metallic material irradiated by a low-energy high-current electron beam
Experiments with stainless steel (304L grade) samples exposed to microsecond pulses of high-current low-energy (10–30 keV) electron beam have been performed to determine dependences of the morphology, average ...
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Article
Behavior of prebreakdown emission centers with 200-kv 100-ns pulses applied to a vacuum gap
Using an electron-transparent anode (titanium foil), the behavior of prebreakdown emission centers on a cathode made of 12X18H10T stainless steel is studied for the case of vacuum gap excitation by 100-ns-wide...
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Article
Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons
The effect of intense atomic hydrogen flux on the defect density in the surface layer of single-crystal silicon is studied. It is shown that the formation of local molten regions by pulsed-light heating of Si ...
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Article
A Wide-Aperture, Low-Energy, and High-Current Electron Beam Source with a Plasma Anode Based on a Reflective Discharge
A source of low-energy (10–30 keV) high-current (up to 30-kA) electron beams efficiently and stably operating under conditions of oil-free vacuum has been developed. It is based on an electron gun with an expl...
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Article
Calculation of the parameters of a high-current reflective discharge with a hot cathode
A physical model of a self-sustaining reflective discharge is formulated based on the continuity equation for the electron flux and the equation of energy balance on the hot cathode. The model allows one to ca...
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Article
High-current Penning discharge with self-heated cathode
A theoretical model of self-sustained Penning (reflective) discharge is formulated based on the equation of continuity of the electron flow and the equation of energy balance on the cathode. Using the proposed...
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Article
Kinetics of Hydrogenation and Variations in Resistance of Vanadium Thin Films Treated in Atomic Hydrogen Flow
Methods of nuclear reactions, x-ray diffraction analysis, transmission electron and nuclear microscopy were used to investigate the mechanism of hydrogenation of thin vanadium films in their treatment in a flo...
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Article
Atomic hydrogen flux density measured using thin metal films
Using one-or two-layer films of transition metals, it is possible to determine the atomic hydrogen flux density under reduced gas pressure conditions (10−1–10−3 Pa). The method consists in monitoring a change in ...
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Article
The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures
It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such s...
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Article
Formation of Accelerated Electron Flows under the Conditions of a Pulsed Low-Current Vacuum Discharge
It is well known that a vacuum arc discharge operating at nearly threshold currents is unstable and features short-time (10–7–10–8 s) voltage and current bursts. We were the first to detect under these conditions...
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Article
Production of GexSi1-x, and SiC Films on Si Substrates Using Particle-Beam Technologies
The paper presents the results of preliminary experiments on the production of GexSi1-x/Si structures using deposition of a thin Ge film on a Si substrate, implantation of Si ions and rapid electron-beam annealin...
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Article
The Enhanced Outdiffusion and Its Influence on the Impurity Behavior in the Implanted Si at Rapid Electron Beam Annealing
The paper presents the results of a comprehensive study of the outdif-fusion of volatile impurities (P, As, Sb) from originally amorphous ion-implanted layers (IILs) of Si at rapid electron-beam heating in vac...