Abstract
A refined nonlinear model of a low-barrier diode based on semiconductor junctions, which is constructed in a modified equivalent electric circuit, is proposed. The model takes into account the design features of diodes of this type, as compared with a well-known model, and can be recommended for use in designing frequency converting monolithic microwave integrated circuits (MMICs) in a frequency range of up to 110 GHz.
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Original Russian Text © I.V. Yunusov, V.A. Kagadei, A.Yu. Fazleeva, V.S. Arykov, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 3, pp. 208–216.
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Yunusov, I.V., Kagadei, V.A., Fazleeva, A.Y. et al. A nonlinear microwave model of a low-barrier diode based on semiconductor junctions. Russ Microelectron 45, 196–204 (2016). https://doi.org/10.1134/S1063739716020116
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DOI: https://doi.org/10.1134/S1063739716020116